A hierarchical transparent back contact leveraging an AlGaO_x passivating layer, Ti₃C₂T_x MXene with a high work function, and a transparent cracked film lithography (CFL) templated nanogrid is demonstrated on copper-free cadmium telluride (CdTe) devices. AlGaO_x improves device open-circuit voltage but reduces the fill factor when using a CFL-templated metal contact. Including a Ti₃C₂T_x interlayer improves the fill factor, lowers detrimental Schottky barriers, and enables metallization with CFL by providing transverse conduction into the nanogrid. The bifacial performance of an AlGaO_x/Ti₃C₂T_x/CFL gold contact is evaluated, reaching 19.5% frontside efficiency and 2.8% backside efficiency under 1-sun illumination for a copper-free, group-V doped CdTe device. Under dual illumination, device power generation reached 200 W/m² with 0.1 sun backside illumination.

中文翻译：

---

用于双面 CdTe PV 的分层透明背接触

在无铜碲化镉 (CdTe) 器件上演示了利用 AlGaO _x钝化层、具有高功函数的 Ti ₃ C ₂ T _x MXene 和透明裂纹薄膜光刻 (CFL) 模板纳米网格的分层透明背接触。当使用 CFL 模板金属接触时， AlGaO _x可以提高器件开路电压，但会降低填充因子。包含 Ti ₃ C ₂ T _x中间层可提高填充因子，降低有害的肖特基势垒，并通过向纳米网格提供横向传导来实现 CFL 金属化。评估了 AlGaO _x /Ti ₃ C ₂ T _x /CFL 金触点的双面性能，在 1 太阳光照下，无铜、V 族掺杂的 CdTe 器件的正面效率达到 19.5%，背面效率达到 2.8%。双光照下， 0.1太阳光背面光照下，器件发电量达到200 W/m ^{2 。}