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Intrinsic Self-Trapped Excitons in Graphitic Carbon Nitride
Nano Letters ( IF 10.8 ) Pub Date : 2024-03-18 , DOI: 10.1021/acs.nanolett.4c00238
Junhong Yu 1 , Yunhu Wang 2 , Yubu Zhou 3 , Wenhui Fang 3 , Baiquan Liu 3 , Jun Xing 2
Affiliation  

Graphitic carbon nitrides (g-C3N4) as low-cost, chemically stable, and ecofriendly layered semiconductors have attracted rapidly growing interest in optoelectronics and photocatalysis. However, the nature of photoexcited carriers in g-C3N4 is still controversial, and an independent charge-carrier picture based on the band theory is commonly adopted. Here, by performing transient spectroscopy studies, we show characteristics of self-trapped excitons (STEs) in g-C3N4 nanosheets including broad trapped exciton-induced absorption, picosecond exciton trapping without saturation at high photoexcitation density, and transient STE-induced stimulated emissions. These features, together with the ultrafast exciton trapping polarization memory, strongly suggest that STEs intrinsically define the nature of the photoexcited states in g-C3N4. These observations provide new insights into the fundamental photophysics of carbon nitrides, which may enlighten novel designs to boost energy conversion efficiency.

中文翻译:

石墨碳氮化物中本征自俘获激子

石墨氮化碳(g -C 3 N 4)作为低成本、化学稳定且环保的层状半导体,引起了人们对光电子学和光催化领域快速增长的兴趣。然而, g -C 3 N 4中光生载流子的性质仍存在争议,通常采用基于能带理论的独立载流子图。在这里,通过进行瞬态光谱研究,我们展示了g -C 3 N 4纳米片中自俘获激子(STE)的特征,包括宽俘获激子诱导吸收、高光激发密度下不饱和的皮秒激子俘获以及瞬态 STE 诱导刺激排放。这些特征与超快激子俘获偏振存储器一起强烈表明STE本质上定义了g -C 3 N 4中光激发态的性质。这些观察结果为氮化碳的基本光物理学提供了新的见解,这可能会启发新颖的设计来提高能量转换效率。
更新日期:2024-03-18
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