Organic field-effect transistors (OFETs) have broad prospects in biomedical, sensor, and aerospace applications. However, obtaining temperature-immune OFETs is difficult because the electrical properties of organic semiconductors (OSCs) are temperature-sensitive. The zero-temperature coefficient (ZTC) point behavior can be used to achieve a temperature-immune output current; however, it is difficult to achieve in organic devices with thermal activation characteristics, according to the existing ZTC point theory. Here, the Fermi pinning in OSCs is eliminated using the defect passivation strategy, making the Fermi level closer to the tail state at low temperatures; thus threshold voltage (V_T) is negatively correlated with temperature. ZTC point behaviors in OFETs are achieved by compensation between V_T and mobility at different temperatures to improve its temperature immunity. A temperature-immune output current can be realized in a variable-temperature bias voltage test over 50000 s by biasing the device at the ZTC point. This study provides an effective solution for temperature-immune OFETs and inspiration for their practical application.

中文翻译：

---

通过温度免疫有机场效应晶体管的缺陷钝化实现零温度系数点行为

有机场效应晶体管（OFET）在生物医学、传感器和航空航天应用中具有广阔的前景。然而，获得不受温度影响的 OFET 很困难，因为有机半导体 (OSC) 的电性能对温度敏感。零温度系数 (ZTC) 点行为可用于实现不受温度影响的输出电流；然而，根据现有的ZTC点理论，在具有热激活特性的有机器件中很难实现。这里，利用缺陷钝化策略消除了OSC中的费米钉扎，使得低温下的费米能级更接近尾态；因此阈值电压（V _T）与温度负相关。 OFET 中的 ZTC 点行为是通过不同温度下V _T和迁移率之间的补偿来实现的，以提高其温度抗扰度。通过在 ZTC 点偏置器件，可以在超过 50000 秒的变温偏置电压测试中实现不受温度影响的输出电流。这项研究为不受温度影响的OFET提供了有效的解决方案，并为其实际应用提供了启发。