Heterogeneity of Light-Induced Open-Circuit Voltage Loss in Perovskite/Si Tandem Solar Cells,ACS Energy Letters

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Heterogeneity of Light-Induced Open-Circuit Voltage Loss in Perovskite/Si Tandem Solar Cells
ACS Energy Letters ( IF 19.3 ) Pub Date : 2024-03-12 , DOI: 10.1021/acsenergylett.4c00110
Zhi-Wei Tao _{1,

2} , Teng Lu ₃ , Xiang Gao ₄ , Mathias Uller Rothmann ₂ , Yang Jiang _{1,

2} , Zi-Yue Qiang ₄ , Hong-Qiang Du _{1,

2} , Chang Guo ₁ , Long-Hui Yang ₁ , Cai-Xia Wang ₄ , Yun Liu ₃ , Yi-Bing Cheng _{1,

2} , Wei Li _{1,

2}

Affiliation

Mixed-halide perovskite-silicon tandem solar cells have demonstrated great potential in achieving >40% efficiencies. However, light-induced phase segregation makes the commercialization of mixed-halide perovskite-silicon tandem solar cells difficult. Here, we unveil the impact of phase segregation in the 1.67 eV bandgap Cs_0.17FA_0.83Pb(I_0.80Br_0.20)₃ on the nanoscopic heterogeneity across the film through photoconductive atomic force microscopy. By measuring I–Vcurves at both grain boundaries (GBs) and grain interiors (GIs) with nanoscopic resolution, we identified that iodide-rich phases primarily segregate at defect-enriched GBs under continuous illumination, causing a more significant local open-circuit voltage (V_OC) decrease than GIs. It also results in short-circuit current density and fill factor losses in both single-junction and perovskite/silicon tandem devices after extended illumination. We show that introducing fluorophenylethylammonium iodide (FPEAI) during film fabrication improves device performance and light stability by suppressing phase segregation and passivating defects, thus preventing GB decreases in V_OC and macroscopic device performance losses.

中文翻译：

钙钛矿/硅串联太阳能电池中光致开路电压损耗的异质性

混合卤化物钙钛矿-硅串联太阳能电池已表现出实现 >40% 效率的巨大潜力。然而，光诱导的相分离使得混合卤化物钙钛矿-硅串联太阳能电池的商业化变得困难。在这里，我们通过光电导原子力显微镜揭示了1.67 eV带隙Cs _0.17 FA _0.83 Pb(I _0.80 Br _0.20 ) ₃中的相分离对整个薄膜的纳米级不均匀性的影响。通过以纳米级分辨率测量晶界 (GB) 和晶粒内部 (GI) 的I - V曲线，我们发现富碘相在连续照射下主要在缺陷富集的晶界处偏析，从而导致更显着的局部开路电压( VOC ₎低于 GI。在延长照明后，它还会导致单结和钙钛矿/硅串联器件中的短路电流密度和填充因子损失。我们表明，在薄膜制造过程中引入氟苯乙基碘化铵（FPEAI）可通过抑制相偏析和钝化缺陷来提高器件性能和光稳定性，从而防止 GB 的 VOC 降低_和宏观器件性能损失。

更新日期：2024-03-12

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