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In-situ growth of CuS on polyimide film to construct dense and continuous network: Achieving excellent electrothermal and EMI shielding performance
Composites Science and Technology ( IF 9.1 ) Pub Date : 2024-03-15 , DOI: 10.1016/j.compscitech.2024.110543
Lingtong Li , Zhiheng Zhao , Yang Pan , Minhang Chen , Yang Zhang , Renke Li , Hong Wu , Shaoyun Guo

The performance of the electrothermal film is generally determined by conductive filler network. However, it is still challenging to construct a dense network of conductive fillers in the electrothermal film. In this work, we develop a simple and efficient method to construct a dense and continuous network via in-situ growth of CuS nanosheets on the surface of polyimide (PI) film with stable interfacial bonding. The obtained PI@CuS electrothermal film is further packaged by commercially available PTFE and PI tapes to achieve desirable surface hydrophobic self-cleaning function and stability for the use in different environments. By tuning the network density of CuS nanosheets, it imparts excellent electrothermal conversion efficiency and cycling stability to the PI@CuS film, whose surface temperature could rapidly ramp up over 200 °C at 8 V. The film also exhibits excellent photothermal performance, reaching close to 100 °C at 100 mW/cm. The anti-icing/de-icing experiment shows that the icing time is prolonged significantly at low temperature and the melting time is reduced dramatically. Furthermore, the PI@CuS film also exhibits outstanding electromagnetic interference (EMI) shielding effectiveness of 57.1 dB with a thickness of only 80 μm, and excellent tensile strength of over 90 MPa. The in-situ growth strategy provides a novel route for the fabrication of the electrothermal film with excellent overall performance.

中文翻译:

在聚酰亚胺薄膜上原位生长 CuS 构建致密连续网络:实现优异的电热和 EMI 屏蔽性能

电热膜的性能一般由导电填料网络决定。然而,在电热膜中构建致密的导电填料网络仍然具有挑战性。在这项工作中,我们开发了一种简单有效的方法,通过在具有稳定界面键合的聚酰亚胺(PI)薄膜表面原位生长CuS纳米片来构建致密且连续的网络。所得PI@CuS电热膜进一步采用市售PTFE和PI胶带进行封装,以达到理想的表面疏水自清洁功能和在不同环境下使用的稳定性。通过调节 CuS 纳米片的网络密度,赋予 PI@CuS 薄膜优异的电热转换效率和循环稳定性,其表面温度在 8 V 下可快速升至 200 °C 以上。该薄膜还表现出优异的光热性能,达到接近100 mW/cm 时可达 100 °C。防冰/除冰实验表明,低温下结冰时间显着延长,融化时间大幅缩短。此外,PI@CuS薄膜还表现出出色的电磁干扰(EMI)屏蔽效能,厚度仅为80μm,达到57.1dB,拉伸强度超过90MPa。原位生长策略为制备具有优异综合性能的电热薄膜提供了一条新途径。
更新日期:2024-03-15
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