A simple electrostatic model is proposed to account for the effect of dipoles associated with surface chemical bonds on the electronic structure of the semiconductor surface. In accordance with the model, the formation of the dipolar surface chemical bonds can change the width of the surface depletion layer leaving the surface band bending nearly intact. In addition, the surface dipoles can redistribute charge localized at surface states, which can modify surface recombination velocity of the semiconductor. The model can explain recently obtained experimental data on the electronic passivation of n-InP(100) surface with different sulfide solutions.

中文翻译：

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III-V族半导体表面电子结构的偶极修饰

提出了一个简单的静电模型来解释与表面化学键相关的偶极子对半导体表面电子结构的影响。根据该模型，偶极表面化学键的形成可以改变表面耗尽层的宽度，从而使表面能带弯曲几乎完好无损。此外，表面偶极子可以重新分布位于表面态的电荷，这可以改变半导体的表面复合速度。该模型可以解释最近获得的不同硫化物溶液下n-InP(100)表面电子钝化的实验数据。