A pioneering integration of oxide semiconductor memristors with optoelectronic features is presented, surpassing binary limitations to realize multi‐valued synaptic operations. Through Pt/Ga2O3/Pt memristors, their structural and electronic attributes via atomic force microscopy, X‐ray diffraction, and X‐ray photoelectron spectroscopy are explored. Demonstrating unipolar resistance switching with remarkable endurance and retention, the devices exhibit intricate light‐resistance correlations, yielding substantial photoelectric effects in distinct resistance states. Investigating synaptic behaviors, potentiation, and depression akin to biological synapses are unveiled, facilitating learning and memory processes. The standout achievement lies in attaining quaternary memory storage within a single device. Empirical data and simulations validate this concept, showcasing the potential for encoding and sustaining multiple memory states. This innovation heralds transformative possibilities, emphasizing oxide semiconductor memristors as a gateway to quaternary memory storage and enhanced synaptic functions. In essence, this work pioneers optoelectronic synaptic devices with expanded memory capabilities.

中文翻译：

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具有四元存储的基于氧化物半导体忆阻器的光电突触器件

提出了氧化物半导体忆阻器与光电特性的开创性集成，超越了二进制限制，实现了多值突触操作。透过铂/镓2氧3通过原子力显微镜、X 射线衍射和 X 射线光电子能谱探索了 /Pt 忆阻器的结构和电子属性。该器件展示了具有出色耐久性和保持力的单极电阻切换，表现出复杂的光阻相关性，在不同的电阻状态下产生显着的光电效应。揭示了类似于生物突触的突触行为、增强和抑制的研究，促进了学习和记忆过程。突出的成就在于在单个设备内实现了四进制内存存储。经验数据和模拟验证了这一概念，展示了编码和维持多种存储状态的潜力。这项创新预示着变革的可能性，强调氧化物半导体忆阻器作为四元内存存储和增强突触功能的门户。从本质上讲，这项工作开创了具有扩展存储能力的光电突触设备。