Insufficient carrier concentration and lack of room temperature ferromagnetism in pristine graphene limit its dream applications in electronic and spintronic chips. While theoretical calculations have revealed that graphitic ultradoping can turn graphene into semiconducting and room temperature ferromagnetic, the exotic set of thermodynamic conditions needed for doping result in defects and functionalities in graphene which end up giving significant electronic scattering. We report our discovery of microwave ultradoping of graphene with N > 30%, B ~ 19%, and co-doping to form BCN phases (B₅C₇₃N₂₂, B₈C₇₆N₁₆, and B₁₀C₇₇N₁₃). An unprecedented level of graphitic doping ~95% enhances carrier concentration up to ~9.2 × 10¹²cm⁻², keeping high electronic mobility ~9688 cm² V⁻¹s⁻¹ intact, demonstrated by field effect transistor measurements. Room temperature ferromagnetic character with magnetization ~4.18 emug⁻¹ is reported and is consistent with our DFT band structure calculations. This breakthrough research on tunable graphitic ultradoping of 2D materials opens new avenues for emerging multi-functional technological applications.

原始石墨烯中载流子浓度不足且缺乏室温铁磁性限制了其在电子和自旋电子芯片中的理想应用。虽然理论计算表明石墨超掺杂可以将石墨烯转变为半导体和室温铁磁性材料，但掺杂所需的一组奇异的热力学条件会导致石墨烯中的缺陷和功能，最终产生显着的电子散射。我们报告了我们对石墨烯进行微波超掺杂的发现，其中 N > 30%、B ~ 19% 以及共掺杂形成 BCN 相（B ₅ C ₇₃ N ₂₂、B ₈ C ₇₆ N ₁₆和 B ₁₀ C ₇₇ N ₁₃）。场效应晶体管测量表明，前所未有的~95%石墨掺杂水平将载流子浓度提高至~9.2 × 10 ¹² cm ^-2，保持高电子迁移率~9688 cm ² V ^-1 s ^-1完好无损。报道了磁化强度约为 4.18 emug ^{-1 的}室温铁磁特征，并且与我们的 DFT 能带结构计算一致。这项关于二维材料可调石墨超掺杂的突破性研究为新兴多功能技术应用开辟了新途径。