The behavior of the ultra high temperature ceramic material HfB-SiC-C(graphene) under exposure to a supersonic carbon dioxide plasma, with and without the addition of laser irradiation, has been studied. The material was heated to 1750 °C in an inductively coupled plasma jet without laser irradiation. A temperature jump to 2190 °C was observed when additional ytterbium laser irradiation was applied to the surface. The spectral emissivity of the heated surface at wavelengths of 0.65 and 0.9 m was studied. It was found that the spectral emissivity decreases as the material oxidizes. The heat flux to the surface of the heated material was measured and compared to the heat flux to a cold copper surface under the same conditions. Analysis of the surface of HfB-SiC-C(graphene) material after exposure was performed. Differences in microstructure were detected between specimens exposed to carbon dioxide plasma with and without additional laser irradiation.

中文翻译：

---

超音速二氧化碳等离子体附加激光照射下超高温陶瓷材料的传热和行为

研究了超高温陶瓷材料 HfB-SiC-C（石墨烯）暴露于超音速二氧化碳等离子体（有或没有激光照射）下的行为。在没有激光照射的情况下，在感应耦合等离子体射流中将材料加热至 1750 °C。当额外的镱激光照射到表面时，观察到温度跃升至 2190 °C。研究了加热表面在0.65和0.9 m波长下的光谱发射率。研究发现，光谱发射率随着材料的氧化而降低。测量加热材料表面的热通量，并与相同条件下冷铜表面的热通量进行比较。对曝光后的 HfB-SiC-C（石墨烯）材料的表面进行了分析。在有和没有额外激光照射的情况下暴露于二氧化碳等离子体的样品之间检测到微观结构的差异。