The application of fluorinated materials in optoelectronic devices has been extensively studied, yet their potential in polymer-based memory devices still needs to be explored. The strategic manipulation of electron donors and electron acceptors to enhance the electron properties of material represents a valid approach to advancing data storage performance. The acceptor unit plays a crucial role in charge trapping, by fluorinating acceptor unit, the polymer electron affinity can be further modulated, leading to optimized carrier injection. In this work, we have synthesized three donor-acceptor-type (D-A-type) conjugated polymers, employing benzimidazole-isoindole electron acceptors substituted with different numbers of fluorine atoms. These polymers were utilized as active layers and integrated into indium-tin-oxide/active layer/aluminum devices through a straightforward fabrication process. These devices exhibit excellent ternary non-volatile memory performance and demonstrate sustained stability even after 10 cycle numbers. Notably, the PM4Fbzo-based device achieves impressively low threshold voltages of −0.55 V and −0.80 V, accompanied by a switching current ratio surpassing 10. These exceptional outcomes show the tremendous potential of fluorinated benzimidazole-isoindole-based materials for ternary storage applications, showcasing them as one of the promising candidates for the next generation of materials.

中文翻译：

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用于三元存储器件的氟化苯并咪唑基共轭聚合物

氟化材料在光电器件中的应用已被广泛研究，但其在聚合物存储器件中的潜力仍需探索。对电子供体和电子受体进行策略性操作以增强材料的电子特性是提高数据存储性能的有效方法。受体单元在电荷捕获中起着至关重要的作用，通过氟化受体单元，可以进一步调节聚合物的电子亲和力，从而优化载流子注入。在这项工作中，我们合成了三种供体-受体型（DA型）共轭聚合物，采用被不同数量的氟原子取代的苯并咪唑-异吲哚电子受体。这些聚合物被用作有源层，并通过简单的制造工艺集成到氧化铟锡/有源层/铝器件中。这些器件表现出优异的三态非易失性存储器性能，并且即使在 10 个循环次数后也表现出持续的稳定性。值得注意的是，基于PM4Fbzo的器件实现了令人印象深刻的-0.55 V和-0.80 V的低阈值电压，同时开关电流比超过10。这些出色的结果显示了氟化苯并咪唑-异吲哚基材料在三元存储应用中的巨大潜力，展示它们作为下一代材料的有前途的候选者之一。