We investigated diffusion memristors in the structure of Ag/Ta₂O₅/HfO₂/Pt, in which active Ag ions control active metal ion diffusion and mimic biological brain functions. The CMOS compatible high-k metal oxide could control an Ag electrode that was ionized by applying an appropriate voltage to form a conductive filament, and the movement of Ag ions was chemically and electrically controlled due to oxygen density. This diffusion memristor exhibited diffused characteristics with a selectivity of 109, and achieved a low power consumption of 2 mW at a SET voltage of 0.2 V. The threshold transitions were reliably repeatable over 20 cycles for compliance currents of 10⁻⁶ A, 10⁻⁴ A, and no compliance current, with the largest standard deviation value of SET variation being 0.028. Upon filament formation, Ag ions readily diffused into the interface of the Ta₂O₅ and HfO₂ layer, which was verified by investigating the Ag atomic percentage using XPS and vertical EDX and by measuring the relaxation time of 0.8 ms. Verified volatile switching device demonstrated the biological synaptic properties of quantum conductance, short-term memory, and long-term memory due to controlling the Ag. Diffusion memristors using designed control and switching layers as following film density and oxygen vacancy have improved results as low-power devices and neuromorphic devices compared to other diffusion-based devices, and these properties can be used for various applications such as selectors, synapses, and neuromorphic devices.

中文翻译：

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利用肖特基缺陷通过银扩散控制挥发性阈值切换和突触特性

_{我们研究了Ag/Ta 2} O ₅ /HfO ₂ /Pt结构中的扩散忆阻器，其中活性银离子控制活性金属离子扩散并模拟生物脑功能。 CMOS兼容的高k金属氧化物可以控制Ag电极，通过施加适当的电压来电离形成导电丝，并且由于氧密度，Ag离子的运动受到化学和电学控制。该扩散忆阻器表现出选择性为 109 的扩散特性，并在 0.2 V 的 SET 电压下实现了 2 mW 的低功耗。对于 10 ^-6 A、10 ^-4的柔量电流，阈值转换在 20 个周期内可靠地重复。A，无柔顺电流，SET变化的最大标准偏差值为0.028。细丝形成后，Ag 离子很容易扩散到 Ta ₂ O ₅和 HfO ₂层的界面中，这一点通过使用 XPS 和垂直 EDX 研究 Ag 原子百分比并测量 0.8 ms 的弛豫时间来验证。经过验证的易失性开关装置通过控制 Ag 展示了量子电导、短期记忆和长期记忆的生物突触特性。与其他基于扩散的器件相比，使用按照膜密度和氧空位设计的控制和切换层的扩散忆阻器作为低功耗器件和神经形态器件改善了结果，并且这些特性可用于各种应用，例如选择器、突触和神经形态设备。