Van der Waals structures present a unique opportunity for tailoring material interfaces and integrating photonic functionalities. By precisely manipulating the twist angle and stacking sequences, it is possible to elegantly tune and functionalize the electronic and optical properties of layered van der Waals structures. Among these materials, two-dimensional hexagonal boron nitride (hBN) stands out for its remarkable optical properties and wide band gap, making it a promising host for solid state single photon emitters at room temperature. Previous investigations have demonstrated the observation of bright single photon emission in hBN across a wide range of wavelengths. In this study, we unveil an application of van der Waals technology in modulating their spectral shapes and brightness by carefully controlling the stacking sequences and polytypes. Our theoretical analysis reveals remarkably large variations in the Huang-Rhys factors–an indicator of the interaction between a defect and its surrounding lattice–reaching up to a factor of 3.3 for the same defect in different stacking sequences. We provide insights into the underlying mechanism behind these variations, shedding light on the design principles necessary to achieve rational and precise control of defect emission. This work paves the way for enhancing defect identification and facilitating the engineering of highly efficient single photon sources and qubits using van der Waals materials.

范德华结构为定制材料界面和集成光子功能提供了独特的机会。通过精确控制扭转角度和堆叠顺序，可以优雅地调整和功能化层状范德华结构的电子和光学特性。在这些材料中，二维六方氮化硼（hBN）以其卓越的光学特性和宽带隙而脱颖而出，使其成为室温下固态单光子发射器的有前途的主体。之前的研究表明，在六方氮化硼中可以在很宽的波长范围内观察到明亮的单光子发射。在这项研究中，我们揭示了范德华技术的应用，通过仔细控制堆叠顺序和多型来调制它们的光谱形状和亮度。我们的理论分析揭示了 Huang-Rhys 因子（缺陷与其周围晶格之间相互作用的指标）的显着变化，对于不同堆叠序列中的相同缺陷高达 3.3 倍。我们深入了解这些变化背后的潜在机制，阐明实现合理和精确控制缺陷发射所需的设计原则。这项工作为增强缺陷识别和促进使用范德华材料设计高效单光子源和量子位铺平了道路。