Twisted van der Waals heterostructures have recently emerged as a versatile platform for engineering interaction-driven, topological phenomena with a high degree of control and tunability. Since the initial discovery of correlated phases in twisted bilayer graphene, a wide range of moiré materials have emerged with fascinating electronic properties. While the field of twistronics has rapidly evolved and now includes a range of multi-layered systems, moiré systems comprised of double trilayer graphene remain elusive. Here, we report electrical transport measurements combined with tight-binding calculations in twisted double trilayer graphene (TDTLG). We demonstrate that small-angle TDTLG (~1.7−2.0^∘) exhibits an intrinsic bandgap at the charge neutrality point. Moreover, by tuning the displacement field, we observe a continuous insulator-semimetal-insulator transition at the CNP, which is also captured by tight-binding calculations. These results establish TDTLG systems as a highly tunable platform for further exploration of magneto-transport and optoelectronic properties.

扭曲范德华异质结构最近已成为一种多功能平台，用于工程交互驱动的拓扑现象，具有高度的控制和可调性。自从最初在扭曲双层石墨烯中发现相关相以来，出现了各种具有令人着迷的电子特性的莫尔材料。虽然双电子领域已经迅速发展，现在包括一系列多层系统，但由双三层石墨烯组成的莫尔系统仍然难以捉摸。在这里，我们报告了扭曲双三层石墨烯（TDTLG）中的电传输测量与紧束缚计算相结合。我们证明小角度 TDTLG (~1.7−2.0 ^∘ ) 在电荷中性点表现出固有的带隙。此外，通过调整位移场，我们观察到 CNP 处连续的绝缘体-半金属-绝缘体转变，这也通过紧束缚计算捕获。这些结果使 TDTLG 系统成为进一步探索磁输运和光电特性的高度可调平台。