This article aims to design transient voltage suppressor (TVS) diode array protection circuits under high-power microwave (HPM) pulse injection to protect sensitive semiconductor and microwave devices from interfered or even damaged by intentionally electromagnetic interference. First of all, conductivity modulation with charge dependent resistors is added into original nonlinear large signal TVS diode model provided by Infineon and simulated results by improved model are compared with measured results obtained by transmission line pulse measurement. Next, due to the fact that the capacitance of the TVS diode degrades RF performances of the protected device, a transmission line (TL) connecting with the TVS diode is designed to improve the S-parameters. Subsequently, design procedures of circuits with multiple discharge paths of TVS diodes are summarized. Based on above these two points, four protection circuits are proposed and tested under HPM measurement system. The highest overshoot protection ratio of these circuits is approximately 16.5–22 dB when the input HPM pulse power ranges from 50 to 63 dBm. Through simulated and measured results, couple microstrip TLs and effect of TL inductance on overshoot PRs are investigated.

中文翻译：

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高功率微波脉冲注入下降低负载效应的瞬态电压抑制二极管阵列保护电路

本文旨在设计高功率微波（HPM）脉冲注入下的瞬态电压抑制器（TVS）二极管阵列保护电路，以保护敏感的半导体和微波器件免受故意电磁干扰的干扰甚至损坏。首先，在英飞凌提供的原始非线性大信号TVS二极管模型中加入电荷相关电阻的电导调制，并将改进模型的仿真结果与传输线脉冲测量得到的测量结果进行比较。其次，由于TVS二极管的电容会降低受保护器件的RF性能，因此设计了与TVS二极管连接的传输线（TL）以改善S参数。随后，总结了TVS二极管多放电路径电路的设计流程。基于以上两点，提出了四种保护电路并在HPM测量系统下进行了测试。当输入HPM脉冲功率范围为50至63 dBm时，这些电路的最高过冲保护比约为16.5至22 dB。通过仿真和测量结果，研究了耦合微带线TL以及TL电感对过冲PR的影响。