Two-dimensional (2D) materials that combine ferromagnetic, semiconductor, and piezoelectric properties hold significant potential for both fundamental research and spin electronic devices. However, the majority of reported 2D ferromagnetic-semiconductor-piezoelectric materials rely on d-electron systems, which limits their practical applications due to a Curie temperature lower than room temperature (RT). Here, we report a high-crystallinity carbon nitride (CCN) material based on sp-electrons using a chemical vapor deposition strategy. CCN exhibits a band gap of 1.8 eV and has been confirmed to possess substantial in-plane and out-of-plane piezoelectricity. Moreover, we acquired clear evidences of ferromagnetic behavior at room temperature. Extensive structural characterizations combined with theoretical calculations reveal that incorporating structural oxygen into the highly ordered heptazine structure causes partial substitution of nitrogen sites, which is primarily responsible for generating room-temperature ferromagnetism and piezoelectricity. As a result, the strain in wrinkles can effectively modulate the domain behavior and piezoelectric potential at room temperature. The addition of RT ferromagnetic-semiconductor-piezoelectric material based on sp-electrons to the family of two-dimensional materials opens up numerous possibilities for novel applications in fundamental research and spin electronic devices.

结合了铁磁、半导体和压电特性的二维 (2D) 材料在基础研究和自旋电子器件方面具有巨大的潜力。然而，大多数报道的二维铁磁半导体压电材料依赖于d电子系统，由于居里温度低于室温（RT），这限制了它们的实际应用。在这里，我们报告了一种采用化学气相沉积策略的基于 sp 电子的高结晶度氮化碳 (CCN) 材料。CCN 的带隙为 1.8 eV，并已被证实具有大量的面内和面外压电性。此外，我们获得了室温下铁磁行为的明确证据。广泛的结构表征与理论计算相结合表明，将结构氧纳入高度有序的七嗪结构中会导致氮位点的部分取代，这主要是产生室温铁磁性和压电性的原因。因此，皱纹中的应变可以有效地调节室温下的畴行为和压电势。将基于 sp 电子的 RT 铁磁半导体压电材料添加到二维材料系列中，为基础研究和自旋电子器件中的新颖应用开辟了多种可能性。