At low temperatures, iron monosilicide is a strongly correlated narrow-gap semiconductor. A first order transition to metal state induced by magnetic field was observed for the first time at 355 T in Ref. [Yu. B. Kudasov et al., JETP Lett. (1998) 350]. However, recently a smooth transition from 230 T to 270 T was found under similar conditions in Ref. [D. Nakamura et al., Phys. Rev. Lett. (2021) 156601]. This discrepancy goes far beyond experimental errors and deserves a careful study. A methodological analysis of inductive and RF techniques of conductivity measurements shows that the difference of these critical magnetic field estimations stems from a divergence in dynamic ranges of the techniques. In fact, the above mentioned methods supplement each other. The semiconductor-metal transition under magnetic field in FeSi is a complex phenomenon which occurs at the wide range of magnetic fields.

中文翻译：

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超高磁场诱导 FeSi 中的半导体-金属转变

在低温下，单硅化铁是一种强相关的窄带隙半导体。在参考文献 1 中，首次在 355 T 下观察到由磁场诱导的到金属态的一级转变。[于。B. Kudasov 等人，JETP Lett。（1998）350]。然而，最近在参考文献中的类似条件下发现了从 230 T 到 270 T 的平滑过渡。[D. 中村等人，物理学。莱特牧师。（2021）156601]。这种差异远远超出了实验误差的范围，值得仔细研究。对电导率测量的感应和射频技术的方法分析表明，这些临界磁场估计的差异源于这些技术动态范围的差异。事实上，上述方法是相辅相成的。FeSi 中磁场下的半导体-金属转变是一个复杂的现象，在广泛的磁场范围内发生。