• State-of-the-art research on two-dimensional material-based memristive arrays is comprehensively reviewed.

• Critical steps in achieving in-memory computing are identified and highlighted, covering material selection, device performance analysis, and array structure design.

• Challenges in progressing from single-device characterization to array-level and system-level implementations are discussed, along with proposed solutions.

中文翻译：

---

内存计算的最新进展：利用 2D 材料探索忆阻器和忆阻器阵列

• 全面回顾了基于二维材料的忆阻阵列的最新研究成果。

• 识别并强调了实现内存计算的关键步骤，包括材料选择、器件性能分析和阵列结构设计。

• 讨论了从单器件表征发展到阵列级和系统级实现的挑战以及提出的解决方案。