A thin dielectric layer is an important constituent element in 2D materials-based electronics and photonics. Current methods of using hexagonal boron nitride (hBN) and direct deposition of dielectric layer induce either high leakage current or unintentional doping and defect. Here we report a technique for damaging free integration of dielectric layer to form high-quality van der Waals (vdW) heterostructure. The dielectric layer is grown by atomic layer deposition (ALD) on 2D materials and then deterministically transferred on the target 2D material. The much weaker binding energy between the ALD dielectric and the 2D materials enables the growth and exfoliation of the atomically thin dielectrics, which is confirmed by the X-ray photoelectron spectroscopy analyses and the density function theory calculations. The effectiveness of the technology is proven by the Raman and photoluminescence measurement on WS₂ monolayer protected by the dielectric film through harsh plasma treatment. Furthermore, a 2D materials-based MOSFET is constructed as a demonstration of the viability of the technology for electronic device applications. The method produces flat surfaces and clean interfaces and would greatly benefit electronic and photonic applications as encapsulation or high-κ gate dielectric.

薄介电层是基于二维材料的电子学和光子学的重要组成元素。当前使用六方氮化硼（hBN）和直接沉积介电层的方法会导致高漏电流或无意的掺杂和缺陷。在这里，我们报告了一种破坏介电层自由集成以形成高质量范德华（vdW）异质结构的技术。介电层通过原子层沉积 (ALD) 在 2D 材料上生长，然后确定性地转移到目标 2D 材料上。 ALD 电介质和 2D 材料之间的结合能较弱，使得原子级薄电介质能够生长和剥离，这一点已被 X 射线光电子能谱分析和密度函数理论计算所证实。该技术的有效性通过对经过严格等离子体处理的介电膜保护的WS ₂单层进行拉曼和光致发光测量得到证明。此外，还构建了基于 2D 材料的 MOSFET，以证明该技术在电子设备应用中的可行性。该方法可产生平坦的表面和清洁的界面，并将极大有利于电子和光子应用，如封装或高κ栅极电介质。