Metal halide perovskites (MHPs) exhibit electronic and ionic characteristics suitable for memristors. However, polycrystalline thin film perovskite memristors often suffer from reliability issues due to grain boundaries, while bulk single-crystal perovskite memristors struggle to achieve high LRS/HRS ratios. In this study, a single crystal memristive device utilizing a wide bandgap perovskite is introduced, MAPbBr₃, in a high surface/thickness configuration. This thin single crystal overcomes these challenges, exhibiting a remarkable LRS/HRS ratio of up to 50 and endurance of 10³ cycles, representing one of the highest reported values to date. This exceptional stability enables to analyze the electroforming process and LRS through impedance spectroscopy, providing insights into the underlying operational mechanism. As far as it is known, this is the first reported thin single-crystal MHP memristor device and the first time that the electroforming process is recorded through impedance spectroscopy. This device's outstanding stability and performance position it as a promising candidate for high-density data storage and neuromorphic applications.

中文翻译：

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用于高性能和长耐用忆阻器的钙钛矿薄单晶

金属卤化物钙钛矿（MHP）表现出适合忆阻器的电子和离子特性。然而，多晶薄膜钙钛矿忆阻器经常因晶界而遭受可靠性问题，而块状单晶钙钛矿忆阻器则难以实现高LRS/HRS比。在这项研究中，引入了一种采用宽带隙钙钛矿的单晶忆阻器件，MAPbBr ₃，具有高表面/厚度配置。这种薄单晶克服了这些挑战，表现出高达 50 的卓越 LRS/HRS 比率和 10 ^{3 个}周期的耐久性，是迄今为止报告的最高值之​​一。这种卓越的稳定性使得能够通过阻抗谱分析电铸过程和 LRS，从而深入了解潜在的操作机制。据了解，这是首次报道薄型单晶MHP忆阻器器件，也是首次通过阻抗谱记录电铸过程。该设备出色的稳定性和性能使其成为高密度数据存储和神经形态应用的有前途的候选者。