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Perovskite Stannate Heterojunctions for Self-Powered Ultraviolet Photodiodes Operated in Extreme Environments
Advanced Electronic Materials ( IF 6.2 ) Pub Date : 2024-02-07 , DOI: 10.1002/aelm.202300530 Daseob Yoon 1 , Yujeong Lee 1 , Youngho Kang 2 , Junwoo Son 1, 3
Advanced Electronic Materials ( IF 6.2 ) Pub Date : 2024-02-07 , DOI: 10.1002/aelm.202300530 Daseob Yoon 1 , Yujeong Lee 1 , Youngho Kang 2 , Junwoo Son 1, 3
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High-performance UV photodetectors call for sensitive and energy-efficient signal detection in extreme environments. To satisfy the requirement of a UV detection without an external power consumption, self-powered UV photodetectors must be realized by an optimal combination of heterostructure with maximum built-in potential using novel wide-bandgap materials. Here, self-powered UV photodiodes are designed via the band engineering of a wide-bandgap Sr(Sn,Ni)O3/BaSnO3 heterojunction for the first time. Based on the theoretical concept of acceptor doping by Ni substitution in SrSnO3, remarkably, this heterojunction with a conduction band offset of 0.94 eV shows strong nonlinear electrical characteristics with extremely low Idark (≈100 fA) owing to the spatial gradient of the potential barrier across the interfaces, outstanding photo-to-dark current ratio (>107 at 25 °C and > 104 at 300 °C), and high stability under various extreme conditions upon UV illumination even without external bias (V = 0 V). This study suggests a novel strategy that utilizes band engineering to maximize sensitivity and minimize energy consumption in harsh environments for UV imaging using the newly discovered wide-bandgap semiconductors.
更新日期：2024-02-09
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