Neuromorphic platforms are gaining popularity due to their superior efficiency, low power consumption, and adaptable parallel signal processing capabilities, overcoming the limitations of traditional von Neumann architecture. We conduct an in-depth investigation into the factors influencing the resistive switching mechanism in memristor devices utilizing lead iodide (PbI₂). We establish correlations between device performance and morphological features, unveiling synaptic like behaviour of device making it suitable for range of flexible neuromorphic applications. Notably, a highly reliable unipolar switching mechanism is identified, exhibiting stability even under mechanical strain (with a bending radius of approximately 4 mm) and in high humidity environment (at 75% relative humidity) without the need for encapsulation. The investigation delves into the complex interplay of charge transport, ion migration and the active interface, elucidating the factors contributing to the remarkable resistive switching observed in PbI₂-based memristors. The detailed findings highlight synaptic behaviors akin to the modulation of synaptic strengths, with an impressive potentiation and depression of 2 × 10⁴ cycles, emphasizing the role of spike time-dependent plasticity (STDP). The flexible platform demonstrates exceptional performance, achieving a simulated accuracy rate of 95.06% in recognizing modified patterns from the National Institute of Standards and Technology (MNIST) dataset with just 30 training epochs. Ultimately, this research underscores the potential of PbI₂-based flexible memristor devices as versatile component for neuromorphic computing. Moreover, it demonstrate the robustness of PbI₂ memristors in terms of their resistive switching capabilities, showcasing resilience both mechanically and electrically. This underscores their potential in replicating synaptic functions for advanced information processing systems.

中文翻译：

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深入了解碘化铅柔性忆阻器器件中的突触功能和电阻开关

神经形态平台因其卓越的效率、低功耗和适应性强的并行信号处理能力而越来越受欢迎，克服了传统冯诺依曼架构的局限性。我们深入研究了影响使用碘化铅 (PbI ₂ ) 的忆阻器器件中电阻开关机制的因素。我们建立了设备性能和形态特征之间的相关性，揭示了设备的突触样行为，使其适用于一系列灵活的神经形态应用。值得注意的是，我们确定了一种高度可靠的单极开关机制，即使在机械应变（弯曲半径约为 4 mm）和高湿度环境（相对湿度 75%）下也能表现出稳定性，而无需封装。该研究深入研究了电荷传输、离子迁移和活性界面之间复杂的相互作用，阐明了在基于 PbI ₂的忆阻器中观察到的显着电阻切换的影响因素。详细的研究结果强调了类似于突触强度调节的突触行为，具有令人印象深刻的 2 × 10 ^{4 个}周期的增强和抑制，强调了尖峰时间依赖性可塑性 (STDP) 的作用。该灵活的平台展示了卓越的性能，仅用 30 个训练周期即可识别美国国家标准与技术研究所 (MNIST) 数据集的修改模式，模拟准确率达到 95.06%。_{最终，这项研究强调了基于 PbI 2}的柔性忆阻器器件作为神经形态计算的多功能组件的潜力。_{此外，它还展示了 PbI 2}忆阻器在阻变能力方面的稳健性，展示了机械和电气方面的弹性。这强调了它们在复制高级信息处理系统的突触功能方面的潜力。