Long-wavelength near-infrared light-emitting diodes (NIR LEDs) with peak emission wavelengths beyond 900 nm are of critical importance for various applications including night vision, biomedical imaging, sensing and optical communications. However, the low radiance and poor operational stability of state-of-the-art long-wavelength NIR LEDs based on soft materials remain the most critical factors limiting their practical applications. Here we develop NIR LEDs emitting beyond 900 nm with improved performance through the rational manipulation of p doping in all-inorganic tin perovskites (CsSnI₃) by retarding and controlling the crystallization process of perovskite precursors in tin-rich conditions. The resulting NIR LEDs exhibit a peak emission wavelength at 948 nm, high radiance of 226 W sr⁻¹ m⁻² and long operational half-lifetime of 39.5 h at a high constant current density of 100 mA cm⁻². Our demonstration of efficient and stable NIR LEDs operating at high current densities may also open up new opportunities towards electrically pumped lasers.

峰值发射波长超过 900 nm 的长波长近红外发光二极管 (NIR LED) 对于夜视、生物医学成像、传感和光通信等各种应用至关重要。然而，基于软材料的最先进的长波长近红外 LED 的低辐射率和较差的工作稳定性仍然是限制其实际应用的最关键因素。在这里，我们开发了发射超过 900 nm 的近红外 LED，通过在富锡条件下延迟和控制钙钛矿前体的结晶过程，合理控制全无机锡钙钛矿 (CsSnI ₃ ) 中的 p 掺杂，从而提高性能。^{所得的NIR LED在100 mA cm -2}的高恒定电流密度下表现出948 nm的峰值发射波长、226 W sr ^-1  m ^-2的高辐射率和39.5 h的长工作半衰期。我们展示的高效稳定的近红外 LED 在高电流密度下运行也可能为电泵浦激光器带来新的机遇。