This study examines a single wurtzite ZnO/ZnBeO quantum well structure oriented in the polar c-direction. The focus is on investigating the binding energies associated with an impurity donor atom within this system. To achieve this, a self-consistent solution to the Schrödinger and Poisson equations is obtained using the finite difference method. The framework employed involves the effective mass and envelope function approximations. The impurity is represented using a hydrogenic-type wave function, and donor binding energies are determined via a variational approach. The research analyzes the binding energies of the $1s$ and $2p_{\pm }$ states, along with the transition energy between them. These quantities are explored as functions of the well width and Be concentration, considering donor positions at the right and left interfaces as well as at the well’s center. Furthermore, the impact of an external magnetic field oriented along the growth direction is assessed, spanning up to $10\mathrm{T}$, in order to quantify changes in the binding energies. The presence of a built-in electric field induces an asymmetric band profile and a triangular well configuration. This asymmetry results in a loss of symmetry within the binding energy curves. Ultimately, the investigation culminates in the computation of the oscillator strength governing transitions between the donor states. When the donor is situated at the right interface, the energy values remain relatively constant as the well width increases, and the oscillator strength values demonstrate a consistent linear rise.

本研究研究了沿极性 c 方向取向的单一纤锌矿ZnO/ZnBeO 量子阱结构。重点是研究与该系统内杂质供体原子相关的结合能。为了实现这一点，使用有限差分法获得了薛定谔和泊松方程的自洽解。所采用的框架涉及有效质量和包络函数近似。使用氢型波函数表示杂质，并通过变分方法确定供体结合能。该研究分析了结合能$1s$和$2p_{\pm }$态，以及它们之间的跃迁能量。考虑左右界面以及孔中心的供体位置，将这些量作为孔宽度和铍浓度的函数进行探索。此外，还评估了沿生长方向定向的外部磁场的影响，范围高达$10\mathrm{时间}$，以量化结合能的变化。内置电场的存在会产生不对称的能带分布和三角形阱结构。这种不对称性导致结合能曲线失去对称性。最终，研究的最终结果是计算控制施主态之间跃迁的振荡器强度。当供体位于正确的界面时，随着井宽的增加，能量值保持相对恒定，并且振荡器强度值表现出一致的线性上升。