Two-dimensional semiconductors are considered as channel materials for field-effect transistors to overcome short-channel effects and reduce the device size. As the contacts to the metallic electrodes are decisive for the device performance, we study the electronic properties of contacts between Janus MoSSe and various two-dimensional metals. We demonstrate that weak interactions at these van der Waals contacts suppress Fermi level pinning and show that ohmic contacts can be formed for both terminations of Janus MoSSe, generating favorable transport characteristics.

中文翻译：

---

Janus MoSSe 与二维金属之间的欧姆接触设计

二维半导体被认为是场效应晶体管的沟道材料，以克服短沟道效应并减小器件尺寸。由于与金属电极的接触对于器件性能至关重要，因此我们研究了 Janus MoSSe 与各种二维金属之间接触的电子特性。我们证明了这些范德华接触处的弱相互作用抑制了费米能级钉扎，并表明可以在 Janus MoSSe 的两个终端形成欧姆接触，从而产生有利的传输特性。