This study investigates molybdenum disulfide (MoS₂) suspension to enhance the charge transport properties of the donor-acceptor co-polymer (DA copolymers) semiconductor diketopyrrolopyrrole thieno[3,2-b]thiophene (DPPT-TT) for inkjet-printed thin-film transistor (TFT) fabrication. A mixture of MoS₂ nanosheets mixed in the DA copolymer was developed and inkjet printed for the fabrication of TFT devices. The I–V measurements of the fabricated TFTs indicated that the addition of MoS₂ suspension (0.5 wt%) into the polymer matrix resulted in the improvement of carrier mobility in both hole and electron transport, with an increase of 52 % and 130 %, respectively, compared to devices without the nanosheets. The improved electrical behavior was not entirely due to transport through the single crystal nanosheets. The introduced MoS₂ nanosheets also induced strongly aggregated polymeric domains in the thin film compared to pristine films without the suspension, resulting in a high degree of molecular ordering within the polymeric film. The origin of the improved microstructure of DPPT-TT-based thin films was analyzed using AFM, UV–vis–NIR, and XRD systems. The structural results were shown to correlate with the electrical behavior, further demonstrating the efficacy of the MoS₂ nanosheets on the enhancement of the TFT performance.

本研究研究了二硫化钼 (MoS ₂ ) 悬浮液，以增强供体-受体共聚物 (DA 共聚物) 半导体二酮吡咯并吡咯噻吩并[3,2- b ]噻吩 (DPPT-TT) 的电荷传输特性，用于喷墨印刷薄膜薄膜晶体管（TFT）制造。开发了混合在 DA 共聚物中的 MoS ₂纳米片的混合物并进行喷墨印刷，用于制造 TFT 器件。所制造的 TFT 的I - V测量表明，在聚合物基体中添加 MoS _{2悬浮液 (0.5 wt%) 导致空穴和}电子传输中载流子迁移率的改善，分别增加了 52 % 和 130 %，分别与没有纳米片的设备相比。电学行为的改善并不完全是由于通过单晶纳米片的传输。与没有悬浮液的原始薄膜相比，引入的MoS ₂纳米片还在薄膜中诱导了强烈聚集的聚合物域，从而导致聚合物薄膜内的分子高度有序化。使用AFM 、UV-vis-NIR 和 XRD 系统分析了 DPPT-TT 薄膜微观结构改善的根源。结构结果与电学行为相关，进一步证明了MoS ₂纳米片在增强TFT性能方面的功效。