Schottky junctions are commonly used for fabricating heterojunction-based 2D transition metal dichalcogenide (TMD) photodetectors, characteristically offering a wide detection range, high sensitivity and fast response. However, these devices often suffer from reduced detectivity due to the high dark current, making it challenging to discover a simple and efficient universal way to improve the photoelectric performances. Here, we demonstrate a novel approach for integrating ZnO nanowire gates into a MoS₂–Au Schottky junction to improve the photoelectric performances of photodetectors by locally controlling the Schottky barrier. This strategy remarkably reduces the dark current level of the device without affecting its photocurrent and the Schottky detectivity can be modified to a maximum detectivity of 1.4 × 10¹³ Jones with −20 V NG bias. This work provides potential possibilities for tuning the band structure of other materials and optimizing the performance of heterojunction photodetectors.

中文翻译：

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使用顶部 ZnO 纳米线栅极对 Au/MoS2 肖特基势垒进行局部调制，实现高性能光电检测

肖特基结通常用于制造基于异质结的二维过渡金属二硫化物（TMD）光电探测器，具有检测范围宽、灵敏度高和响应快的特点。然而，这些设备通常由于高暗电流而导致检测率降低，因此寻找一种简单有效的通用方法来提高光电性能具有挑战性。在这里，我们展示了一种将 ZnO 纳米线栅极集成到 MoS ₂ -Au 肖特基结中的新方法，通过局部控制肖特基势垒来提高光电探测器的光电性能。这种策略显着降低了器件的暗电流水平，而不影响其光电流，并且肖特基探测率可以在-20 V NG偏压下修改为1.4 × 10 ¹³ Jones的最大探测率。这项工作为调整其他材料的能带结构和优化异质结光电探测器的性能提供了潜在的可能性。