The research of two-dimensional (2D) Tellurium (Te) or tellurene is thriving to address current challenges in emerging thin-film electronic and optoelectronic devices. However, the study of 2D-Te-based devices for high-frequency applications is still lacking in the literature. This work presents a comprehensive study of two types of radio frequency (RF) diodes based on 2D-Te flakes and exploits their distinct properties in two RF applications. First, a metal-insulator-semiconductor (MIS) structure is employed as a nonlinear device in a passive RF mixer, where the achieved conversion loss at 2.5 GHz and 5 GHz is as low as 24 dB and 29 dB, respectively. Then, a metal-semiconductor (MS) diode is tested as a zero-bias millimeter-wave power detector and reaches an outstanding linear-in-dB dynamic range over 40 dB, while having voltage responsivities as high as 257 V ⋅ W⁻¹ at 1 GHz (up to 1 V detected output voltage) and 47 V ⋅ W⁻¹ at 2.5 GHz (up to 0.26 V detected output voltage). These results show superior performance compared to other 2D material-based devices in a much more mature technological phase. Thus, the authors believe that this work demonstrates the potential of 2D-Te as a promising material for devices in emerging high-frequency electronics.

二维 (2D) 碲 (Te) 或碲烯的研究正在蓬勃发展，以解决新兴薄膜电子和光电器件当前的挑战。然而，针对高频应用的 2D-Te 基器件的研究仍然缺乏文献。这项工作对两种基于 2D-Te 薄片的射频 (RF) 二极管进行了全面研究，并在两种 RF 应用中利用了它们的独特特性。首先，采用金属-绝缘体-半导体（MIS）结构作为无源射频混频器中的非线性器件，在2.5 GHz和5 GHz下实现的转换损耗分别低至24 dB和29 dB。然后，金属半导体 (MS) 二极管作为零偏置毫米波功率检测器进行测试，并达到超过 40 dB 的出色线性 dB 动态范围， 1 GHz 时为 W ⁻¹（检测到的输出电压高达 1 V），2.5 GHz 时为 47 V  ⋅  W ⁻¹（检测到的输出电压高达 0.26 V）。这些结果表明，与处于更成熟技术阶段的其他基于二维材料的设备相比，它们具有卓越的性能。因此，作者认为这项工作展示了 2D-Te 作为新兴高频电子器件的有前途材料的潜力。