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Magnetic properties of intercalated quasi-2D Fe3-xGeTe2 van der Waals magnet
npj 2D Materials and Applications ( IF 9.7 ) Pub Date : 2023-08-21 , DOI: 10.1038/s41699-023-00417-w
Hector Iturriaga , Luis M. Martinez , Thuc T. Mai , Adam J. Biacchi , Mathias Augustin , Angela R. Hight Walker , Mohamed Fathi Sanad , Sreeprasad T. Sreenivasan , Yu Liu , Elton J. G. Santos , Cedomir Petrovic , Srinivasa R. Singamaneni

Among several well-known transition metal-based compounds, cleavable van der Waals (vdW) Fe3-xGeTe2 (FGT) magnet is a strong candidate for use in two-dimensional (2D) magnetic devices due to its strong perpendicular magnetic anisotropy, sizeable Curie temperature (TC ~154 K), and versatile magnetic character that is retained in the low-dimensional limit. While the TC remains far too low for practical applications, there has been a successful push toward improving it via external driving forces such as pressure, irradiation, and doping. Here we present experimental evidence of a room temperature (RT) ferromagnetic phase induced by the electrochemical intercalation of common tetrabutylammonium cations (TBA+) into quasi-2D FGT. We obtained Curie temperatures as high as 350 K with chemical and physical stability of the intercalated compound. The temperature-dependent Raman measurements, in combination with vdW-corrected ab initio calculations, suggest that charge transfer (electron doping) upon intercalation could lead to the observation of RT ferromagnetism. This work demonstrates that molecular intercalation is a viable route in realizing high-temperature vdW magnets in an inexpensive and reliable manner, and has the potential to be extended to bilayer and few-layer vdW magnets.



中文翻译:

插层准二维 Fe3-xGeTe2 范德华磁体的磁性能

在几种著名的过渡金属基化合物中,可裂解范德华 (vdW) Fe 3-x GeTe 2 (FGT) 磁体由于其强大的垂直磁各向异性而成为二维 (2D) 磁性器件的有力候选者、相当大的居里温度(T C ~154 K)以及在低维极限下保留的多功能磁特性。虽然TC对于实际应用来说仍然太低,但人们已经成功地通过压力、辐射和掺杂等外部驱动力来改善它。在这里,我们提出了通过将常见的四丁基铵阳离子 (TBA+) 电化学插入准二维 FGT 中诱导室温 (RT) 铁磁相的实验证据。我们获得了高达 350 K 的居里温度,并且插层化合物具有化学和物理稳定性。温度相关的拉曼测量与 vdW 校正的从头计算相结合表明,插层时的电荷转移(电子掺杂)可能导致观察到 RT 铁磁性。这项工作表明,分子嵌入是以廉价且可靠的方式实现高温 vdW 磁体的可行途径,

更新日期:2023-08-21
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