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Electron transport and scattering mechanisms in ferromagnetic monolayer Fe3GeTe2
npj 2D Materials and Applications ( IF 9.7 ) Pub Date : 2023-08-07 , DOI: 10.1038/s41699-023-00413-0
Danis I. Badrtdinov , Georgy V. Pushkarev , Mikhail I. Katsnelson , Alexander N. Rudenko

We study intrinsic charge-carrier scattering mechanisms and determine their contribution to the transport properties of the two-dimensional ferromagnet Fe3GeTe2. We use state-of-the-art first-principles calculations combined with the model approaches to elucidate the role of the electron-phonon and electron-magnon interactions in the electronic transport. Our findings show that the charge carrier scattering in Fe3GeTe2 is dominated by the electron-phonon interaction, while the role of magnetic excitations is marginal. At the same time, the magnetic ordering is shown to effect essentially on the electron-phonon coupling and its temperature dependence. This leads to a sublinear temperature dependence of the electrical resistivity near the Curie temperature, which is in line with experimental observations. The room temperature resistivity is estimated to be ~ 35 μΩ  cm which may be considered as a lower intrinsic limit for monolayer Fe3GeTe2.



中文翻译:

铁磁单层 Fe3GeTe2 中的电子传输和散射机制

我们研究了本征载流子散射机制,并确定了它们对二维铁磁体 Fe 3 GeTe 2输运特性的贡献。我们使用最先进的第一原理计算结合模型方法来阐明电子-声子和电子-磁振子相互作用在电子传输中的作用。我们的研究结果表明 Fe 3 GeTe 2中的载流子散射电子-声子相互作用占主导地位,而磁激发的作用微乎其微。同时,磁排序被证明对电子-声子耦合及其温度依赖性有重要影响。这导致居里温度附近电阻率的亚线性温度依赖性,这与实验观察结果一致。室温电阻率估计约为 35 μΩ · cm , 这可被视为单层 Fe 3 GeTe 2 的固有下限。

更新日期:2023-08-07
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