Among quantum devices based on 2D materials, gate-defined quantum confined 1D channels are much less explored, especially in the high-mobility regime where many-body interactions play an important role. We present the results of measurements and theory of conductance quantization in a gate-defined one-dimensional channel in a single layer of transition metal dichalcogenide material WSe₂. In the quasi-ballistic regime of our high-mobility sample, we report conductance quantization steps in units of e²/h for a wide range of carrier concentrations. Magnetic field measurements show that as the field is raised, higher conductance plateaus move to accurate quantized values and then shift to lower conductance values while the e²/h plateau remains locked. Based on microscopic atomistic tight-binding theory, we show that in this material, valley and spin degeneracies result in 2 e²/h conductance steps for noninteracting holes, suggesting that symmetry-breaking mechanisms such as valley polarization dominate the transport properties of such quantum structures.

在基于二维材料的量子器件中，门定义的量子限制一维通道的研究要少得多，特别是在多体相互作用发挥重要作用的高迁移率领域。_{我们提出了单层过渡金属二硫属化物材料 WSe 2}中栅极定义的一维通道中电导量子化的测量结果和理论。在我们的高迁移率样品的准弹道体系中，我们报告了各种载流子浓度的电导量化步长，单位为e ² / h 。磁场测量表明，随着磁场的增强，较高的电导平台会移动到精确的量化值，然后转向较低的电导值，而 e ² /h高原仍处于锁定状态。基于微观原子紧束缚理论，我们表明，在这种材料中，谷和自旋简并性导致非相互作用空穴的电导阶跃为2 e ² / h ，这表明谷极化等对称破缺机制主导了这种量子的传输特性。结构。