Two-dimensional materials can be strongly influenced by their surroundings. A dielectric environment screens and reduces the Coulomb interaction between electrons in the two-dimensional material. Since in Mott materials the Coulomb interaction is responsible for the insulating state, manipulating the dielectric screening provides direct control over Mottness. Our many-body calculations reveal the spectroscopic fingerprints of such Coulomb engineering: we demonstrate eV-scale changes to the position of the Hubbard bands and show a Coulomb engineered insulator-to-metal transition. Based on our proof-of-principle calculations, we discuss the (feasible) conditions under which our scenario of Coulomb engineering of Mott materials can be realized experimentally.

二维材料会受到周围环境的强烈影响。介电环境屏蔽并减少二维材料中电子之间的库仑相互作用。由于在莫特材料中，库仑相互作用决定绝缘状态，因此操纵介电屏蔽可以直接控制莫特尼斯。我们的多体计算揭示了此类库仑工程的光谱指纹：我们展示了哈伯德带位置的 eV 尺度变化，并展示了库仑工程绝缘体到金属的转变。基于我们的原理验证计算，我们讨论了可以通过实验实现莫特材料库仑工程场景的（可行）条件。