The density of states (DOS) is fundamentally important for understanding physical processes in organic disordered semiconductors, yet hard to determine experimentally. We evaluated the DOS by considering recombination via tail states and using the temperature and open-circuit voltage ($V_{\mathrm{oc}}$) dependence of the ideality factor. By performing Suns-$V_{\mathrm{oc}}$ measurements, we find that the energetic disorder increases deeper into the band gap, which is not expected for a Gaussian or exponential DOS. The linear dependence of the disorder on energy reveals the power-law DOS in organic solar cells.

中文翻译：

---

理想因子的开路电压依赖性揭示有机太阳能电池中的幂律态密度

态密度（DOS）对于理解有机无序半导体的物理过程至关重要，但很难通过实验确定。我们通过考虑通过尾态的重组并使用温度和开路电压（$V_{\mathrm{奥克}}$）理想因子的依赖性。通过表演太阳队-$V_{\mathrm{奥克}}$测量中，我们发现能量无序在带隙深处增加，这对于高斯或指数 DOS 来说是不期望的。无序对能量的线性依赖性揭示了有机太阳能电池中的幂律 DOS。