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Epitaxy of a Monocrystalline CsPbBr3–SrTiO3 Halide–Oxide Perovskite p–n Heterojunction with High Stability for Photodetection
Advanced Materials ( IF 27.4 ) Pub Date : 2023-06-02 , DOI: 10.1002/adma.202303544 Songlong Liu 1 , Yang Chen 1 , Weiqi Gao 1 , Wanying Li 1 , Xiaokun Yang 1 , Zhiwei Li 1 , Zhaojing Xiao 1 , Yuan Liu 1 , Yiliu Wang 1
Advanced Materials ( IF 27.4 ) Pub Date : 2023-06-02 , DOI: 10.1002/adma.202303544 Songlong Liu 1 , Yang Chen 1 , Weiqi Gao 1 , Wanying Li 1 , Xiaokun Yang 1 , Zhiwei Li 1 , Zhaojing Xiao 1 , Yuan Liu 1 , Yiliu Wang 1
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Perovskite heterojunctions are essential components of perovskite optoelectronics, but their construction and investigation have been impeded by the instability and severe anion interdiffusion. This work epitaxially deposits p-type CsPbBr3 on n-type Nb:SrTiO3 (STO) to construct a functional perovskite heterojunction with high stability. The lattice match allows epitaxial growth of CsPbBr3 to occur over large scale, resulting in a monocrystalline thin film with excellent crystallinity and uniformity. The highly stable STO prevents the anion migration frequently happening in halide perovskites, forming a sharp interface of two perovskite with opposite conduction type, with which a diode is fabricated and a current rectification ratio of 374 is obtained. The diode is able to work as a photodetector with dark current of 2.01 × 10−12 A at −1 V and responsivity (R) of 8.26 A W−1, rendering a detectivity (D*) of 2.98 × 1013 Jones. Owing to the all-inorganic architecture, effective photoresponse at temperature as high as 150 °C is guaranteed with D* of ≈1.52 × 1013 Jones. Combining the unique optoelectrical properties of halide perovskite and the rigidity of oxide perovskite, the epitaxy of CsPbBr3 on n–type STO opens up a new method to construct functional perovskite heterojunction for optoelectronics.
中文翻译：
用于光电检测的高稳定性单晶 CsPbBr3–SrTiO3 卤化物–氧化物钙钛矿 p–n 异质结的外延
钙钛矿异质结是钙钛矿光电子学的重要组成部分，但其不稳定性和严重的阴离子相互扩散阻碍了其构建和研究。该工作在n型Nb:SrTiO 3 (STO)上外延沉积p型CsPbBr 3，构建具有高稳定性的功能性钙钛矿异质结。晶格匹配允许CsPbBr 3大规模外延生长，从而形成具有优异结晶度和均匀性的单晶薄膜。高稳定性的STO防止了卤化物钙钛矿中频繁发生的阴离子迁移，在两个相反导电类型的钙钛矿之间形成尖锐的界面，利用该界面制作了二极管，并获得了374的电流整流比。该二极管能够用作光电探测器，在-1 V 下暗电流为 2.01 × 10 -12 A，响应度 ( R ) 为 8.26 AW -1，探测率 ( D *) 为 2.98 × 10 13 Jones。由于采用全无机结构，保证了在高达 150 °C 的温度下的有效光响应，D * 约为 1.52 × 10 13 Jones。结合卤化物钙钛矿独特的光电特性和氧化物钙钛矿的刚性，在n型STO上外延CsPbBr 3开辟了构建光电功能钙钛矿异质结的新方法。
更新日期：2023-06-02
中文翻译：
用于光电检测的高稳定性单晶 CsPbBr3–SrTiO3 卤化物–氧化物钙钛矿 p–n 异质结的外延
钙钛矿异质结是钙钛矿光电子学的重要组成部分，但其不稳定性和严重的阴离子相互扩散阻碍了其构建和研究。该工作在n型Nb:SrTiO 3 (STO)上外延沉积p型CsPbBr 3，构建具有高稳定性的功能性钙钛矿异质结。晶格匹配允许CsPbBr 3大规模外延生长，从而形成具有优异结晶度和均匀性的单晶薄膜。高稳定性的STO防止了卤化物钙钛矿中频繁发生的阴离子迁移，在两个相反导电类型的钙钛矿之间形成尖锐的界面，利用该界面制作了二极管，并获得了374的电流整流比。该二极管能够用作光电探测器，在-1 V 下暗电流为 2.01 × 10 -12 A，响应度 ( R ) 为 8.26 AW -1，探测率 ( D *) 为 2.98 × 10 13 Jones。由于采用全无机结构，保证了在高达 150 °C 的温度下的有效光响应，D * 约为 1.52 × 10 13 Jones。结合卤化物钙钛矿独特的光电特性和氧化物钙钛矿的刚性，在n型STO上外延CsPbBr 3开辟了构建光电功能钙钛矿异质结的新方法。
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