Cr₂Si₂Te₆ (CST) is a van der Waals (vdW) ferromagnetic semiconductor. The unique spin model and temperature-dependent magnetic ordering of CST provide opportunities for the next generation of two-dimensional (2D) spintronic devices. Here, abnormal magneto-transport properties are found in CST nanoflakes with variations in thickness. Interestingly, the thickness-dependent magnetoresistance (MR) effect exhibits a nonlinear change as a function of the magnetic field, temperature, and thickness. At a certain temperature below Curie temperature (T_c), a sign reversal of MR ratio from positive to negative can even be detected with thickness reduction. At the temperature range from T_c to 60 K, the Hall effect also presents a transformation from nonlinear behavior in thick layer CST to linear behavior in thin layer CST. These distinctive magneto-transport properties are attributed to the variation of spin correlation with thickness in CST nanoflakes. These findings probe the unique magneto-transport properties of CST and associate it with ferromagnetic correlation, which provides a basis for subsequent spintronics device design based on this material. This work also offers new insights into the relationship between sample thickness, transport properties, and spin correlation of other vdW ferromagnets. It lays a foundation for future vdW magnet-based device fabrication and possible spintronic applications.

Cr ₂ Si ₂ Te ₆ (CST) 是范德华 (vdW) 铁磁半导体。CST 独特的自旋模型和与温度相关的磁排序为下一代二维 (2D) 自旋电子器件提供了机会。在这里，在厚度不同的 CST 纳米薄片中发现了异常的磁传输特性。有趣的是，依赖于厚度的磁阻 (MR) 效应会随着磁场、温度和厚度呈现出非线性变化。在低于居里温度 ( Tc )的某个温度下，甚至可以通过厚度减小检测到 MR 比从正到负的符号反转_。在T _c的温度范围内到 60 K，霍尔效应还呈现出从厚层 CST 中的非线性行为到薄层 CST 中的线性行为的转变。这些独特的磁传输特性归因于 CST 纳米薄片中自旋相关性与厚度的变化。这些发现探讨了 CST 独特的磁传输特性，并将其与铁磁相关性联系起来，为后续基于该材料的自旋电子器件设计提供了基础。这项工作还为了解样品厚度、传输特性和其他 vdW 铁磁体的自旋相关性之间的关系提供了新的见解。它为未来基于 vdW 磁体的器件制造和可能的自旋电子学应用奠定了基础。