Quantum dot light-emitting diodes (QLEDs) have developed rapidly in the last several decades, in which the maximum external quantum efficiency of the three primary color cadmium (Cd)-based QLEDs have exceeded the theoretical maximum value. However, the presence of Cd element has severely hampered their commercialization. Indium phosphide (InP)-based quantum dots (QDs) without heavy metals have continuously adjustable luminescence range from blue to near infrared, which is a competitive alternative for Cd-based QDs. Especially in the last few years, the synthesis techniques and the device structures of InP-based QLEDs have been greatly improved. In this review, we first introduce the properties of InP-based QDs, carrier dynamics and the early development history. Then, we focus on the development of InP-based red, green and blue primary color QLEDs from their first report in 2011 to the current state of the art. The effects of QDs structure (core/shell or gradient-alloyed QDs and organic ligand modified QDs) and device structure (charge transport layer and interfacial engineering) on the performance of InP-based QLEDs are also summarized.

量子点发光二极管（QLEDs）在过去的几十年里发展迅速，其中三基色镉（Cd）基QLEDs的最大外量子效率已经超过了理论最大值。然而，Cd 元素的存在严重阻碍了它们的商业化。不含重金属的基于磷化铟 (InP) 的量子点 (QD) 具有从蓝色到近红外的连续可调发光范围，这是基于 Cd 的量子点的有竞争力的替代品。特别是近几年，InP基QLED的合成技术和器件结构有了很大的改进。在这篇综述中，我们首先介绍了 InP 基量子点的特性、载流子动力学和早期发展历史。然后，我们专注于基于 InP 的红、绿和蓝基色 QLED 从 2011 年的第一份报告到目前的最新技术水平的发展。还总结了 QD 结构（核/壳或梯度合金 QD 和有机配体改性 QD）和器件结构（电荷传输层和界面工程）对 InP 基 QLED 性能的影响。