Correlated x-ray diffraction imaging and light microscopy provide a conclusive picture of three-dimensional dislocation arrangements on the micrometer scale. The characterization includes bulk crystallographic properties like Burgers vectors and determines links to structural features at the surface. Based on this approach, we study here the thermally induced slip-band formation at prior mechanical damage in Si wafers. Mobilization and multiplication of preexisting dislocations are identified as dominating mechanisms, and undisturbed long-range emission from regenerative sources is discovered.

中文翻译：

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位错的相关三维成像：半导体晶圆中热滑移的发生的见解。

相关的X射线衍射成像和光学显微镜可提供微米级尺度上的三维位错排列的最终图像。表征包括大量晶体学性质（如Burgers矢量），并确定与表面结构特征的链接。基于这种方法，我们在这里研究了硅晶片中先前受机械损伤时的热诱导滑带形成。先前存在的位错的动员和繁殖被认为是主要机制，并且发现了再生来源的不受干扰的远距离发射。