Strontium Oxide Tunnel Barriers for High Quality Spin Transport and Large Spin Accumulation in Graphene,Nano Letters

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Strontium Oxide Tunnel Barriers for High Quality Spin Transport and Large Spin Accumulation in Graphene
Nano Letters ( IF 9.6 ) Pub Date : 2017-11-16 00:00:00 , DOI: 10.1021/acs.nanolett.7b03543
Simranjeet Singh ₁ , Jyoti Katoch ₁ , Tiancong Zhu ₁ , Ryan J. Wu ₂ , Adam S. Ahmed ₁ , Walid Amamou ₃ , Dongying Wang ₁ , K. Andre Mkhoyan ₂ , Roland K. Kawakami _{1,

3}

Affiliation

The quality of the tunnel barrier at the ferromagnet/graphene interface plays a pivotal role in graphene spin valves by circumventing the impedance mismatch problem, decreasing interfacial spin dephasing mechanisms and decreasing spin absorption back into the ferromagnet. It is thus crucial to integrate superior tunnel barriers to enhance spin transport and spin accumulation in graphene. Here, we employ a novel tunnel barrier, strontium oxide (SrO), onto graphene to realize high quality spin transport as evidenced by room-temperature spin relaxation times exceeding a nanosecond in graphene on silicon dioxide substrates. Furthermore, the smooth and pinhole-free SrO tunnel barrier grown by molecular beam epitaxy (MBE), which can withstand large charge injection current densities, allows us to experimentally realize large spin accumulation in graphene at room temperature. This work puts graphene on the path to achieve efficient manipulation of nanomagnet magnetization using spin currents in graphene for logic and memory applications.

中文翻译：

氧化锶隧道势垒用于石墨烯中的高质量自旋传输和大自旋积累

铁磁体/石墨烯界面处的隧道势垒质量通过规避阻抗失配问题，减少界面自旋相移机制并减少自旋吸收回到铁磁体中，在石墨烯自旋阀中起着举足轻重的作用。因此，至关重要的是要集成高级隧道势垒，以增强石墨烯中的自旋运输和自旋积累。在这里，我们在石墨烯上采用了一种新型的隧道势垒氧化锶（SrO），以实现高质量的自旋传输，这是由二氧化硅衬底上的石墨烯在室温下自旋弛豫时间超过一纳秒所证明的。此外，分子束外延（MBE）所生长的光滑无针孔SrO隧道势垒可以承受大的电荷注入电流密度，使我们能够在室温下通过实验实现石墨烯中的大量自旋积累。这项工作使石墨烯走上了使用石墨烯中的自旋电流实现逻辑和存储应用有效控制纳米磁铁磁化的道路。

更新日期：2017-11-17

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