Modifying the electrochemical performance of vertically-oriented few-layered graphene through rotary plasma processing,Journal of Materials Chemistry A

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Modifying the electrochemical performance of vertically-oriented few-layered graphene through rotary plasma processing
Journal of Materials Chemistry A ( IF 10.7 ) Pub Date : 2017-11-03 00:00:00 , DOI: 10.1039/c7ta06490j
Jinghuang Lin _{1,

2,

3,

4} , Henan Jia _{1,

2,

3,

4} , Yifei Cai _{1,

2,

3,

4} , Shulin Chen _{1,

2,

3,

4} , Haoyan Liang _{1,

2,

3,

4} , Xu Wang _{1,

2,

3,

4} , Fu Zhang _{1,

2,

3,

4} , Junlei Qi _{1,

2,

3,

4} , Jian Cao _{1,

2,

3,

4} , Jicai Feng _{1,

2,

3,

4} , Wei-dong Fei _{1,

2,

3,

4}

Affiliation

Vertically-oriented few-layered graphene (VFG) has a unique three-dimensional morphology and exposed ultrathin edges, and shows great promise for high-performance supercapacitor applications. However, VFG shows limited capacitance owing to poor wettability with electrolytes, which has been a bottleneck for further applications. Herein, we designed and developed an effective strategy, based on rotary plasma etching, to create defects on the side surfaces while simultaneously maintaining the structural integrity of VFG. Rotary plasma etching decreased the contact angle (CA) of VFG from 123° to 34°, compared with conventional vertical etching, which only reduced the CA to 71°. Electrochemical studies demonstrated that VFG samples with a high density of surface defects, introduced by rotary plasma etching, exhibited a high areal capacitance of 1367 μF cm⁻² (a volumetric specific capacitance of 137 F cm⁻³), which was approximately 4 times as large as for pristine VFG-based materials. Our study offers feasible insight into the use of an industrially viable method, rotary plasma processing, for modifying and enhancing the properties of VFG. Our findings may help to accelerate the development of more effective energy storage devices.

中文翻译：

通过旋转等离子体处理改变垂直取向的多层石墨烯的电化学性能

垂直取向的几层石墨烯（VFG）具有独特的三维形态和裸露的超薄边缘，显示出对高性能超级电容器应用的巨大希望。然而，由于与电解质的润湿性差，VFG显示出有限的电容，这已成为进一步应用的瓶颈。本文中，我们基于旋转等离子刻蚀设计并开发了一种有效的策略，可以在维持VFG的结构完整性的同时，在侧表面上产生缺陷。与传统的垂直蚀刻相比，旋转等离子体蚀刻将VFG的接触角（CA）从123°减小到34°，而传统的垂直蚀刻仅将CA减小到71°。电化学研究表明，通过旋转等离子蚀刻引入的VFG样品具有高密度的表面缺陷，^-2（体积比电容为137 F cm^-3），约为原始VFG基材料的4倍。我们的研究为工业上可行的方法（旋转等离子处理）的使用提供了可行的见解，以改进和增强VFG的性能。我们的发现可能有助于加速开发更有效的储能设备。

更新日期：2017-11-16

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