Strongly Coherent Single-Photon Emission from Site-Controlled InGaN Quantum Dots Embedded in GaN Nanopyramids,ACS Photonics

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Strongly Coherent Single-Photon Emission from Site-Controlled InGaN Quantum Dots Embedded in GaN Nanopyramids
ACS Photonics ( IF 6.5 ) Pub Date : 2017-11-29 00:00:00 , DOI: 10.1021/acsphotonics.7b00922
Jong-Hoi Cho ₁ , Youngmin M. Kim ₁ , Seung-Hyuk Lim ₁ , Hwan-Seop Yeo ₁ , Sejeong Kim ₁ , Su-Hyun Gong ₁ , Yong-Hoon Cho ₁

Affiliation

Group III-nitride materials have drawn a great deal of renewed interest due to their versatile characteristics as quantum emitters including room-temperature operation, widely tunable wavelengths from ultraviolet to infrared, and a high degree of linear polarization. However, most reported results for III-nitride-based quantum emitters show large inhomogeneous line width broadening in comparison to their lifetime-limited values, which is detrimental to achieving indistinguishability with high visibility. To overcome this, we propose an unprecedented InGaN quantum dot formation technique at the apex of GaN nanopyramid structures, which significantly suppresses inhomogeneous line width broadening. Using high-resolution transmission electron microscopy, a site-controlled InGaN quantum dot with small height (<2 nm) was estimated. No measurable screening effect or frequency jitter of the single-photon emission was observed, which leads to the narrow homogeneous emission line width (64 ± 8 μeV) beyond the spectral resolution limit via Fourier-transform spectroscopy. The emitted photons exhibited superb antibunching characteristics with a near-unity degree of linear polarization, which is highly relevant for polarized nonclassical light sources for applications in quantum information processing.

中文翻译：

嵌入在GaN纳米金字塔中的受位控InGaN量子点的强相干单光子发射

III族氮化物材料因其作为量子发射器的通用特性而引起了广泛的兴趣，这些特性包括室温操作，从紫外到红外的可宽波长可调以及高度线性偏振。但是，大多数基于III族氮化物的量子发射器的报告结果显示，与其寿命极限值相比，线宽变大，而且不均匀，这不利于实现具有高可见度的可分辨性。为了克服这个问题，我们提出了一种前所未有的InGaN量子点形成技术，该技术在GaN纳米金字塔结构的顶点处显着抑制了不均匀的线宽加宽。使用高分辨率透射电子显微镜，可以估算出高度较小（<2 nm）的位置控制的InGaN量子点。没有观察到可测量的屏蔽效应或单光子发射的频率抖动，这导致通过傅立叶变换光谱法超出光谱分辨率极限的窄均匀发射线宽度（64±8μeV）。发射的光子表现出极好的抗聚束特性，具有接近统一的线性偏振度，这与用于量子信息处理的偏振非经典光源高度相关。

更新日期：2017-11-29

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