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Interlayer Coupling Behaviors of Boron Doped Multilayer Graphene
The Journal of Physical Chemistry C ( IF 3.3 ) Pub Date : 2017-11-14 00:00:00 , DOI: 10.1021/acs.jpcc.7b05771
Guorui Wang 1, 2 , Xiaoli Li 3 , Yanlei Wang 4 , Zhiyue Zheng 1 , Zhaohe Dai 5 , Xiaoying Qi 1 , Luqi Liu 1 , Zhihai Cheng 1 , Zhiping Xu 4 , PingHeng Tan 3 , Zhong Zhang 1
Affiliation  

It is fundamentally important to understand how the interlayer interaction of neighboring graphene sheets is influenced by chemical doping. Here we investigate the interlayer coupling of multilayer graphene doped with controlled boron content via the Raman-active in-plane shear mode. The experimental results reveal a remarkable decline in the interlayer shear modulus as boron content increases, which is a direct consequence of the enlarged interlayer spacing, further supported by the molecular dynamic (MD) simulations. Nanoindentation tests were conducted to clarify the influence of interlayer coupling behaviors on nanomechanical behaviors of boron-doped bilayer graphene. As the interlayer slippage is induced under shear deformations, the weakened shear resistance would lead to the reduced energy dissipation during sliding process. Our results provide valuable insight into fundamental mechanical properties of boron-doped graphene and its interfaces and potentially allows tailoring of interlayer coupling for low energy dissipation electromechanical devices.

中文翻译:

硼掺杂多层石墨烯的层间耦合行为

了解相邻石墨烯片的层间相互作用如何受到化学掺杂的影响从根本上来说很重要。在这里,我们研究了通过拉曼活性面内剪切模式掺杂有可控硼含量的多层石墨烯的层间耦合。实验结果表明,随着硼含量的增加,层间剪切模量显着下降,这是层间间距增大的直接结果,进一步受到分子动力学(MD)模拟的支持。进行了纳米压痕测试,以阐明层间耦合行为对掺硼双层石墨烯的纳米力学行为的影响。由于层间滑动是在剪切变形下引起的,因此抗剪强度的降低将导致滑动过程中能量的减少。
更新日期:2017-11-15
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