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Straight Indium Antimonide Nanowires with Twinning Superlattices via a Solution Route
Nano Letters ( IF 9.6 ) Pub Date : 2017-11-14 00:00:00 , DOI: 10.1021/acs.nanolett.7b01266
Yinyin Qian 1 , Qing Yang 1
Affiliation  

Indium antimonide (InSb) enables diverse applications in electronics and optoelectronics. However, to date, there has not been a report on the synthesis of InSb nanowires (NWs) via a solution-phase strategy. Here, we demonstrate for the first time the preparation of high-quality InSb NWs with twinning superlattices from a mild solution-phase synthetic environment from the reaction of commercial triphenylantimony with tris(2,4-pentanedionato)-indium(III). This reaction occurs at low temperatures from 165 to 195 °C (optimized at ∼180 °C), which is the lowest temperature reported for the growth of InSb NWs to date. Investigations reveal that the InSb NWs are grown via a solution–liquid–solid (SLS) mechanism due to the catalysis of the initially formed indium droplets in the mild solution-phase reaction system. The twinning superlattices in the InSb NWs are determined with a pseudoperiodic length of ∼42 monolayers, which result from an oscillating self-catalytic growth related to the periodical fluctuation between reduction rate of In and Sb sources in the route. The optical pump-terahertz probe spectroscopic measurement suggests that the InSb NWs have potential for applications in high-speed optoelectronic nanodevices.

中文翻译:

通过解法将超晶格孪晶的锑化铟锡纳米线

锑化铟(InSb)在电子和光电子领域实现了多种应用。但是,迄今为止,还没有关于通过溶液阶段策略合成InSb纳米线(NW)的报道。在这里,我们首次展示了从温和的溶液相合成环境中,通过商业化的三苯基锑与三(2,4-戊二酮基)-铟(III)的反应制备具有孪晶超晶格的高质量InSb纳米线。该反应在165至195°C的低温下进行(最优化在〜180°C下),这是迄今为止InSb NWs生长的最低温度。研究表明,由于在温和的固相反应体系中最初形成的铟液滴的催化作用,InSb NWs通过溶液-液体-固体(SLS)机制生长。InSb NWs中的孪晶超晶格是由约42个单层的假周期长度决定的,这是由于振荡自催化生长引起的,该振荡与路径中In和Sb源还原速率之间的周期性波动有关。光泵太赫兹探针光谱测量表明,InSb NW具有在高速光电纳米器件中应用的潜力。
更新日期:2017-11-15
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