Robust Epitaxial Al Coating of Reclined InAs Nanowires,Nano Letters

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Robust Epitaxial Al Coating of Reclined InAs Nanowires
Nano Letters ( IF 9.6 ) Pub Date : 2017-11-14 00:00:00 , DOI: 10.1021/acs.nanolett.7b03444
Jung-Hyun Kang ₁ , Anna Grivnin ₁ , Ella Bor ₁ , Jonathan Reiner ₁ , Nurit Avraham ₁ , Yuval Ronen ₁ , Yonatan Cohen ₁ , Perla Kacman ₂ , Hadas Shtrikman ₁ , Haim Beidenkopf ₁

Affiliation

It was recently shown that in situ epitaxial aluminum coating of indium arsenide nanowires is possible and yields superior properties relative to ex-situ evaporation of aluminum ( Nat. Mater. 2015, 14, 400−406). We demonstrate a robust and adaptive epitaxial growth protocol satisfying the need for producing an intimate contact between the aluminum superconductor and the indium arsenide nanowire. We show that the (001) indium arsenide substrate allows successful aluminum side-coating of reclined indium arsenide nanowires that emerge from (111)B microfacets. A robust, induced hard superconducting gap in the obtained indium arsenide/aluminum core/partial shell nanowires is clearly demonstrated. We compare epitaxial side-coating of round and hexagonal cross-section nanowires and find the surface roughness of the round nanowires to induce a more uniform aluminum profile. Consequently, the extended aluminum grains result in increased strain at the interface with the indium arsenide nanowire, which is found to induce dislocations penetrating into round nanowires only. A unique feature of proposed growth protocol is that it supports in situ epitaxial deposition of aluminum on all three arms of indium arsenide nanowire intersections in a single growth step. Such aluminum coated intersections play a key role in engineering topologically superconducting networks required for Majorana based quantum computation schemes.

中文翻译：

倾斜的InAs纳米线的坚固外延Al涂层

最近显示，砷化铟纳米线的原位外延铝涂层是可能的，并且相对于铝的非原位蒸发具有更好的性能（Nat。Mater。 2015年， 14， 400-406）。我们证明了一个健壮和自适应的外延生长协议，满足铝超导体和砷化铟纳米线之间产生紧密接触的需要。我们显示，（001）砷化铟衬底可以成功地从（111）B微面中出现斜倚的砷化铟纳米线进行铝侧面涂层。在获得的砷化铟/铝核/部分壳纳米线中清楚地显示出坚固，诱导的硬超导间隙。我们比较了圆形和六边形横截面纳米线的外延侧面涂层，并发现了圆形纳米线的表面粗糙度以诱导更均匀的铝轮廓。因此，延伸的铝晶粒会导致与砷化铟纳米线的界面处的应变增加，被发现仅诱导位错渗透到圆形纳米线中。所提出的生长方案的独特之处在于，它支持在单个生长步骤中在砷化铟纳米线相交的所有三个臂上原位外延沉积铝。这种镀铝的交叉口在基于Majorana的量子计算方案所需的工程拓扑超导网络中起着关键作用。

更新日期：2017-11-14

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