Abstract High temperature superconducting tapes based on cuprate compounds are nowadays available on long lengths by several companies. Because high superconducting properties are strongly influenced by the crystallographic orientation of the superconducting film, and because the appropriate crystallographic orientation is obtained through epitaxial film growth, the development of an oriented template is of crucial technological importance. In the rolling assisted biaxially textured substrate (RABiTS) technique, a strong cube texture is obtained by cold rolling fcc metal tape and high temperature annealing, followed by the deposition of one or more buffer layer by either physical vapor deposition (PVD) or chemical solution deposition (CSD). Using the latter approach, it has been recently shown that it is possible to combine substrate recrystallization and buffer layer growth in a single step if the onset of recrystallization occurs at a temperature lower than buffer layer nucleation. In the present contribution, a detailed investigation of biaxially-oriented La2Zr2O7 (LZO) buffer layer grown on cold-rolled Ni-W substrate by combined EBSD, AFM and TEM analyses is reported. It is shown that it is possible to obtain highly {001}〈110〉-textured LZO film directly on cold-rolled Ni-W substrate. Although some small polycrystalline regions appear, this approach leads to a strong suppression of grain boundary grooving typically occurring in RABiT-type substrates. Further, it is shown that, notwithstanding the microstructure of the metal substrate continues to evolve during the conversion heat treatment, the obtained LZO film is well adherent, without cracks or delamination.

中文翻译：

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化学溶液沉积法在冷轧镍钨基体上生长双轴织构的锆酸镧薄膜的开发和表征

摘要 基于铜酸盐化合物的高温超导带现在有几家公司可以提供很长的长度。由于超导薄膜的结晶取向对超导性能的影响很大，而且通过外延膜生长获得合适的结晶取向，因此定向模板的开发具有至关重要的技术意义。在滚压辅助双轴织构基板 (RABiTS) 技术中，通过冷轧 fcc 金属带和高温退火获得强立方体织构，然后通过物理气相沉积 (PVD) 或化学溶液沉积一层或多层缓冲层沉积（CSD）。使用后一种方法，最近已经表明，如果再结晶的开始发生在低于缓冲层成核的温度下，则可以在单个步骤中将衬底再结晶和缓冲层生长结合起来。在目前的贡献中，报告了通过结合 EBSD、AFM 和 TEM 分析在冷轧 Ni-W 衬底上生长的双轴取向 La2Zr2O7 (LZO) 缓冲层的详细研究。结果表明，可以直接在冷轧 Ni-W 基板上获得高度 {001}<110> 织构的 LZO 薄膜。尽管出现了一些小的多晶区域，但这种方法导致了对通常发生在 RABiT 型衬底中的晶界开槽的强烈抑制。此外，研究表明，尽管金属基体的微观结构在转化热处理过程中继续演变，