Wavy Architecture Thin‐Film Transistor for Ultrahigh Resolution Flexible Displays,Small

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Wavy Architecture Thin‐Film Transistor for Ultrahigh Resolution Flexible Displays
Small ( IF 13.0 ) Pub Date : 2017-11-13 , DOI: 10.1002/smll.201703200
Amir Nabil Hanna ₁ , Arwa Talal Kutbee ₁ , Ram Chandra Subedi ₂ , Boon Ooi ₂ , Muhammad Mustafa Hussain ₁

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A novel wavy‐shaped thin‐film‐transistor (TFT) architecture, capable of achieving 70% higher drive current per unit chip area when compared with planar conventional TFT architectures, is reported for flexible display application. The transistor, due to its atypical architecture, does not alter the turn‐on voltage or the OFF current values, leading to higher performance without compromising static power consumption. The concept behind this architecture is expanding the transistor's width vertically through grooved trenches in a structural layer deposited on a flexible substrate. Operation of zinc oxide (ZnO)‐based TFTs is shown down to a bending radius of 5 mm with no degradation in the electrical performance or cracks in the gate stack. Finally, flexible low‐power LEDs driven by the respective currents of the novel wavy, and conventional coplanar architectures are demonstrated, where the novel architecture is able to drive the LED at 2 × the output power, 3 versus 1.5 mW, which demonstrates the potential use for ultrahigh resolution displays in an area efficient manner.

中文翻译：

适用于超高分辨率柔性显示器的波形架构薄膜晶体管

据报道，一种新颖的波浪形薄膜晶体管（TFT）架构与平面传统TFT架构相比，能够实现每单位芯片面积更高70％的驱动电流，可用于柔性显示应用。由于其非典型架构，该晶体管不会改变导通电压或截止电流值，从而在不影响静态功耗的情况下实现了更高的性能。该架构背后的概念是通过沉积在柔性基板上的结构层中的沟槽垂直扩展晶体管的宽度。图中显示了基于氧化锌（ZnO）的TFT的工作情况，其弯曲半径小至5 mm，而电气性能没有降低，也没有栅堆叠中的裂纹。最后，由新颖的波浪形电流驱动的柔性低功率LED，

更新日期：2017-11-13

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