Self-Assembly Growth of In-Rich InGaAs Core–Shell Structured Nanowires with Remarkable Near-Infrared Photoresponsivity,Nano Letters

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Self-Assembly Growth of In-Rich InGaAs Core–Shell Structured Nanowires with Remarkable Near-Infrared Photoresponsivity
Nano Letters ( IF 9.6 ) Pub Date : 2017-11-10 00:00:00 , DOI: 10.1021/acs.nanolett.7b04039
Chen Zhou , Xu-Tao Zhang ₁ , Kun Zheng , Ping-Ping Chen ₁ , Wei Lu ₁ , Jin Zou

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Understanding the compositional distribution of ternary nanowires is essential to build the connection between nanowire structures and their potential applications. In this study, we grew epitaxial ternary InGaAs nanowires with high In concentration on GaAs {111}_B substrates. Our detailed electron microscopy characterizations suggest that the grown ternary InGaAs nanowires have an extraordinary core–shell structure with In-rich cores and Ga-enriched shells, in which both nanowire cores and shells showed compositional gradient. It was found that In-rich nanowire cores are formed due to the Ga-limited growth environment, caused by the competition with the spontaneous InGaAs planar layer growth on the substrate that consumes more Ga than the nominal Ga concentration during the growth. Moreover, the composition gradient in the nanowires cores and shells is a result of strain relaxation between them. Our optoelectronic property measurements from prototype nanowire devices show a remarkable photoresponsivity under the near-infrared illumination. This study provides a new approach for designing and realizing complex nanowire heterostructures for high-efficiency nanowire-based systems and devices.

中文翻译：

具有显着近红外光响应性的富InGaAs核壳结构纳米线的自组装生长

了解三元纳米线的组成分布对于建立纳米线结构及其潜在应用之间的连接至关重要。在这项研究中，我们在GaAs {111} _B上生长了高In浓度的外延三元InGaAs纳米线基材。我们详细的电子显微镜表征表明，生长的三元InGaAs纳米线具有非凡的核-壳结构，其中具有富In核和富Ga壳，其中纳米线核和壳均显示出成分梯度。已发现，由于与Ga上自发的InGaAs平面层生长竞争而引起的Ga受限的生长环境，形成了In富集的纳米线核，该生长过程中消耗的Ga大于标称Ga浓度。此外，纳米线芯和壳中的组成梯度是它们之间应变松弛的结果。我们从原型纳米线设备获得的光电子性能测量结果显示，在近红外照明下具有出色的光响应性。

更新日期：2017-11-11

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