In this paper, Scanning Kelvin Probe Microscopy (SKPM) was applied in combination with standard current-voltage measurements to assess the contact resistance (R_C) effects and to estimate the contact-free charge carrier mobility in n-type transistors based on evaporated films of PDIF-CN₂. This analysis was carried out in particular as a function of the applied polarization voltages. The separate contributions to the R_C phenomenon coming from the injecting (source) and extracting (drain) electrodes were investigated with the possibility to separately analyze the specific electrical behaviour of these two regions. In agreement with previous results, the experimental data here discussed show that the devices under analysis are not simply injected limited. Voltage drops at both the injecting and extracting contacts must be taken into consideration. However, it is worth to mention that for the bottom-contact devices here investigated, a minimum R_C of 5.5 kΩ cm was found in linear regime. These values are significantly lower (i.e. by a factor 5×) than those previously reported for other perylene dimiide thin-film devices with bottom-contact configuration.

本文将扫描开尔文探针显微镜（SKPM）与标准电流-电压测量结合使用，以评估接触电阻（R _C）的影响并评估基于蒸发膜的n型晶体管的无接触电荷载流子迁移率的PDIF-CN ₂。该分析尤其根据所施加的极化电压进行。对R _C的单独贡献研究了来自注入电极（源极）和提取电极（漏极）的现象，并有可能分别分析这两个区域的特定电学行为。与先前的结果一致，此处讨论的实验数据表明，所分析的设备并非简单地注入有限。必须考虑注入和引出触点的电压降。但是，值得一提的是，对于这里研究的底部接触器件，在线性状态下的最小R _C为5.5kΩcm。这些值比先前报道的具有底部接触构造的其他per二酰亚胺薄膜器件的值明显更低（即降低了5倍）。