In this paper, we study the effect of the molecular structure of conjugated polymers on electron and hole transport in organic solid-state electrolyte-gated transistors (SEGTs) using three N,N′-difunctionalized naphthalene diimide (NDI)-based conjugated polymers with (5-methylselenophen-2-yl)vinyl)selenophen-2-yl [P(NDI-SVS)], 2,29-bithiophene [P(NDI2OD-T2)] and 3,3′-dichloro-2,2′-bithiophene [P(NDI2HD-T2Cl2)], respectively. The polymer transistors show electron mobility in the order of 10⁻² ∼ 10⁻³ cm² V⁻¹ s⁻¹ with very low operating voltage (2 V) using a solution processed solid-state electrolyte gate insulator which is composed of poly (vinylidene fluoride-trifluoroethylene) (99.5 vol%) and ion gel, based on poly (vinylidene fluoride-co-hexafluoropropylene) and 1-ethyl-3-methylimidazolium bis(trifluoromethylsulfonyl) imide ion liquid (0.5 vol%). Interestingly, P(NDI-SVS) SEGTs showed remarkable hole mobility of 0.14 ± 0.02 cm² V⁻¹ s⁻¹ owing to the large hole accumulation compared to ∼0.03 cm² V⁻¹ s⁻¹ using the poly (methyl methacrylate) (PMMA) gate dielectric. By controlling the molecular structure, we demonstrate high performance ambipolar SEGTs with P(NDI-SVS) polymer.

在本文中，我们研究了使用三种基于N，N'-双官能化萘二酰亚胺（NDI）的共轭聚合物与有机N- N'-双官能化萘共轭聚合物，共轭聚合物的分子结构对有机固态电解质门控晶体管（SEGT）中电子和空穴传输的影响。（5-甲基硒烯-2-基）乙烯基）硒烯-2-基[P（NDI-SVS）]，2,29-联噻吩[P（NDI2OD-T2）]和3,3'-dichloro-2,2' -联噻吩[P（NDI2HD-T2Cl2）]。该聚合物的晶体管示出的电子迁移率在10顺序^-2  〜10 ^-3 厘米²  V ^-1 小号^-1使用由聚偏二氟乙烯-三氟乙烯（99.5体积％）和基于聚偏二氟乙烯-共-六氟丙烯的离子凝胶组成的固溶电解质固态栅极绝缘子，具有非常低的工作电压（2 V ）以及1-乙基-3-甲基咪唑鎓双（三氟甲基磺酰基）酰亚胺离子液体（0.5体积％）。有趣的是，P（NDI-SVS）SEGTs显示出0.14±0.02厘米显着的空穴迁移率²  V ^-1 小号^-1由于大空穴积聚相比~0.03厘米²  V ^-1 小号^-1使用聚甲基丙烯酸甲酯（PMMA）栅极电介质。通过控制分子结构，我们证明了具有P（NDI-SVS）聚合物的高性能双极性SEGTs。