In this study, a novel donor-acceptor type semiconducting polymer was designed and synthesized based on phenanthro[1,10,9,8-c,d,e,f,g]carbazole backbone. The resulting polymer, poly[ 4-(5-(6-(2-decyltetradecyl)-6H-phenanthro[1,10,9,8-c,d,e,f,g]carbazol-4-yl)thiophen-2-yl)-5,6-bis(octyloxy)-7-(thiophen-2-yl)benzo[c][1,2,5]thiadiazole] (PPTBTT), exhibited high solubility in various solvents which enables facile fabrication of semiconducting devices such as thin-film transistors, and also opens up possibilities for large scale solution processing. Absorption spectra of PPTBTT showed large bathochromic shift when the polymer was prepared as a thin-film, which can be explained by the high solubility and molecular packing of the synthesized polymer. X-ray diffraction measurements showed that the crystalline structure of PPTBTT polymer film is largely influenced by the thermal treatment temperature. Together with the atomic force microscopy data, it was found that the optimal thermal treatment temperature of PPTBTT film is 170 °C. The charge transfer characteristics were confirmed by fabricating PPTBTT thin-film transistor. In accordance with the polycrystalline structure, PPTBTT film transistor showed the highest mobility of 0.0092 cm² V⁻¹ s⁻¹ and on/off ratio of 10⁴ when the device was annealed at 170 °C.

在这项研究中，设计并合成了一种基于菲咯啉[1,10,9,8- c，d，e，f，g ]咔唑骨架的新型供体-受体型半导体聚合物。所得聚合物聚[4-（5-（6-（2-癸基十四烷基）-6 H-菲基[1,10,9,8- c，d，e，f，g ]咔唑-4-基）噻吩-2-基）-5,6-双（辛氧基）-7-（噻吩-2-基）苯并[ c] [1,2,5]噻二唑]（PPTBTT）在各种溶剂中表现出高溶解度，这使得能够轻松制造半导体器件（例如薄膜晶体管），也为大规模溶液处理提供了可能性。当将聚合物制成薄膜时，PPTBTT的吸收光谱显示出较大的红移，这可以用合成聚合物的高溶解度和分子堆积来解释。X射线衍射测量表明，PPTBTT聚合物膜的晶体结构在很大程度上受热处理温度的影响。结合原子力显微镜数据，发现PPTBTT薄膜的最佳热处理温度为170°C。通过制造PPTBTT薄膜晶体管确认了电荷转移特性。当器件在170°C退火时， 电压为² V ^-1  s ^-1，开/关比为10 ⁴。