Unveiling hole trapping and surface dynamics of NiO nanoparticles,Chemical Science

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Unveiling hole trapping and surface dynamics of NiO nanoparticles
Chemical Science ( IF 7.6 ) Pub Date : 2017-10-25 00:00:00 , DOI: 10.1039/c7sc03442c
Luca D'Amario _{1,

2,

3,

4} , Jens Föhlinger _{1,

2,

3,

4} , Gerrit Boschloo _{1,

2,

3,

4} , Leif Hammarström _{1,

2,

3,

4}

Affiliation

The research effort in mesoporous p-type semiconductors is increasing due to their potential application in photoelectrochemical energy conversion devices. In this paper an electron–hole pair is created by band-gap excitation of NiO nanoparticles and the dynamics of the electron and the hole is followed until their recombination. By spectroscopic characterization it was found that surface Ni³⁺ states work as traps for both electrons and holes. The trapped electron was assigned to a Ni²⁺ state and the trapped hole to a “Ni⁴⁺” state positioned close to the valence band edge. The recombination kinetics of these traps was studied and related with the concept of hole relaxation suggested before. The time scale of the hole relaxation was found to be in the order of tens of ns. Finally the spectroscopic evidence of this relaxation is presented in a sensitized film.

中文翻译：

NiO纳米粒子的揭示空穴俘获和表面动力学

由于其在光电化学能量转换装置中的潜在应用，对中孔p型半导体的研究工作正在增加。在本文中，通过NiO纳米粒子的带隙激发来创建电子-空穴对，并跟踪电子和空穴的动力学直到它们复合。通过光谱表征，发现表面Ni ³⁺态充当电子和空穴的陷阱。被俘获的电子被分配为Ni ²⁺态，被俘获的空穴被分配为“ Ni ⁴⁺状态位于价带边缘附近。研究了这些陷阱的重组动力学，并与之前提出的空穴弛豫概念相关。发现空穴弛豫的时间尺度为数十ns的量级。最终，这种弛豫的光谱学证据出现在增感膜中。

更新日期：2017-11-13

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