Abstract Semiconductor oxides with high sensing capacity remain a real challenge from long ago. Several attempts were considered to enhance the sensor's performance factors and achieve high quality requirements. In the present work, we operated a chemical sensor using intrinsic and vanadium doped zinc oxide. These samples were prepared and deposited using low cost spray pyrolysis technique. The structural data revealed good surface morphology and roughness, confirming the existence of ideal environment for oxidizing/reduction reactions. The addition of 4% vanadium minimized the grain size with a diameter lower than 9 nm. The gas testing measurements showed that vanadium doped ZnO presented higher response compared to pure ZnO. V-doped ZnO confirmed an improvement of the optimal operating temperature which varies from 350 °C to 300 °C at 100 ppm of acetone, 50 ppm of ethanol and 500 ppm of H2. Furthermore, V-doped ZnO showed a maximum response reaching 100 at 100 ppm, for 450 °C. This high response is attributed to the effect of vanadium impurities that altered ZnO structure which was confirmed by structural data.

中文翻译：

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钒掺杂对喷雾热解合成ZnO传感性能的影响

摘要 具有高传感能力的半导体氧化物在很久以前仍然是一个真正的挑战。考虑了多种尝试来增强传感器的性能因素并实现高质量要求。在目前的工作中，我们使用本征和钒掺杂的氧化锌操作化学传感器。这些样品是使用低成本喷雾热解技术制备和沉积的。结构数据显示出良好的表面形态和粗糙度，证实了氧化/还原反应的理想环境的存在。添加 4% 的钒使直径小于 9 nm 的晶粒尺寸最小化。气体测试测量表明，与纯 ZnO 相比，钒掺杂的 ZnO 表现出更高的响应。V 掺杂的 ZnO 证实了最佳工作温度的改善，在 100 ppm 丙酮、50 ppm 乙醇和 500 ppm H2 下，最佳工作温度从 350°C 变化到 300°C。此外，在 450 °C 下，V 掺杂的 ZnO 在 100 ppm 时显示出最大响应达到 100。这种高响应归因于改变 ZnO 结构的钒杂质的影响，结构数据证实了这一点。